机构

• 长春光学精密机械与物... [4]
• 半导体研究所 [1]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [6]

内容类型

• 会议论文 [6]

发表日期

• 2022 [1]
• 2013 [2]
• 2007 [1]
• 2005 [1]
• 1998 [1]

学科主题

• 半导体物理 [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Use of electrochemistry in mini-/micro-LEDs and VCSELs 会议论文  OAI收割 Virtual, Online, 2022-02-20 作者:  Kang, Jin-Ho;  Elafandy, Rami;  Li, Bingjun;  Song, Jie;  Han, Jung   |  收藏  |  浏览/下载：14/0  |  提交时间：2022/07/14 EC etching  nanoporous GaN  miniLED  microLED  RGB array  DBR  VCSEL  blue laser   Power scaling and beam divergence compression of bottom-emitting vertical-cavity surface-emitting lasers 会议论文  OAI收割 5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013, June 25, 2013 - June 27, 2013, Beijing, China 作者:  Zhang X.;  Qin L.;  Jia P.;  Wang L.;  Wang L. 收藏  |  浏览/下载：22/0  |  提交时间：2014/05/15 850nm vertical cavity surface emitting lasers utilizing the self-planar mesa structure 会议论文  OAI收割 5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013, June 25, 2013 - June 27, 2013, Beijing, China 作者:  Zhang X.;  Wang L.;  Zhang J.;  Zhang J.;  Zhang J. 收藏  |  浏览/下载：13/0  |  提交时间：2014/05/15 High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   High-power VCSELs single devices aid 2-D arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/25 The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) and laser arrays emitting at 980 nm are reported. Extensive investigations on size scaling behavior of thermal properties of single devices show limits of attainable output characteristics. The maximum continuous wave (CW) output power at room temperature of single devices with aperture size up to 500 m is as high as 1.95 W. The key characteristics such as maximum output power  wavelength and thermal resistance are discussed. The bottom-emitting arrays of 16 elements and 200 m aperture size of individual elements show output power of CW 1.35 W at room temperature. The far-field angle is below 17 for all driving current  which is very favorable for focusing or collmating optics.   The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers 会议论文  OAI收割 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Huang YZ 收藏  |  浏览/下载：7/0  |  提交时间：2010/10/29 vertical-cavity lasers  spontaneous emission factor  laser modes  AlAs oxidation