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Band crossing in isovalent semiconductor alloys with large size mismatch: first-principles calculations of the electronic structure of bi and n incorporated gaas 期刊论文  iSwitch采集
Physical review b, 2010, 卷号: 82, 期号: 19, 页码: 4
作者:  
Deng, Hui-Xiong;  Li, Jingbo;  Li, Shu-Shen;  Peng, Haowei;  Xia, Jian-Bai
收藏  |  浏览/下载:22/0  |  提交时间:2019/05/12
Theoretical study on the predissociation mechanism of co2+ (c (2)sigma(+)(g)) 期刊论文  iSwitch采集
Journal of physical chemistry a, 2009, 卷号: 113, 期号: 46, 页码: 12825-12830
作者:  
Meng, Qingyong;  Huang, Ming-Bao;  Chang, Hai-Bo
收藏  |  浏览/下载:29/0  |  提交时间:2019/05/10
Ab initio investigations of the transport properties of a ge-7 cluster 期刊论文  iSwitch采集
Physical review b, 2007, 卷号: 75, 期号: 15, 页码: 8
作者:  
Dai, Z. X.;  Shi, X. Q.;  Zheng, X. H.;  Wang, X. L.;  Zeng, Z.
收藏  |  浏览/下载:14/0  |  提交时间:2019/05/10
Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped gaas/alxga1-xas single quantum wells at high magnetic-fields 期刊论文  iSwitch采集
Physical review b, 2001, 卷号: 64, 期号: 16, 页码: 4
作者:  
Wang, YJ;  Leem, YA;  McCombe, BD;  Wu, XG;  Peeters, FM
收藏  |  浏览/下载:30/0  |  提交时间:2019/05/12
Temperature-induced turnover of the well and barrier layers in znse/zn0.84mn0.16se superlattices 期刊论文  iSwitch采集
Physical review b, 1999, 卷号: 60, 期号: 4, 页码: 2691-2696
作者:  
Zhu, ZM;  Li, GH;  Zhang, W;  Han, HX;  Wang, ZP
收藏  |  浏览/下载:13/0  |  提交时间:2019/05/12