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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [62]
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OAI收割 [62]
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期刊论文 [51]
会议论文 [11]
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2016 [1]
2014 [1]
2011 [5]
2010 [4]
2009 [3]
2008 [2]
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半导体材料 [62]
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Impurity scattering and Friedel oscillations in monolayer black phosphorus
期刊论文
OAI收割
physical review b, 2016, 卷号: 94, 期号: 3, 页码: 035431
Yong-Lian Zou
;
Juntao Song
;
Chunxu Bai
;
Kai Chang
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  |  
浏览/下载:8/0
  |  
提交时间:2017/03/10
Title: Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated
期刊论文
OAI收割
chinese physics letters, 2014, 卷号: 31, 期号: 4, 页码: 044204
Cui, X
;
Zhang, C
;
Liang, S
;
Zhu, HL
;
Hou, LP
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  |  
浏览/下载:13/0
  |  
提交时间:2015/04/02
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
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  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:
Yin ZG
;
Zhang XW
;
Tan HR
;
Fan YM
;
Zhang SG
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  |  
浏览/下载:41/3
  |  
提交时间:2011/07/05
HIGH-PRESSURE SYNTHESIS
VAPOR-DEPOSITION
NUCLEATION
EMISSION
DIAMOND
GROWTH
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
期刊论文
OAI收割
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:
Deng QW
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  |  
浏览/下载:46/5
  |  
提交时间:2011/07/05
QUANTUM-WELL-STRUCTURE
ALGAN/GAN HETEROSTRUCTURE
YELLOW LUMINESCENCE
DEEP LEVELS
TRAP
PERFORMANCE
FREQUENCY
EPILAYERS
ORIGIN
DIODES
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
OAI收割
materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011
作者:
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2012/06/14
Carrier concentration
Etching
Gallium alloys
Optical properties
Point defects
Raman spectroscopy
Semiconducting gallium compounds
Vapor phase epitaxy
Vapors
Carrier Concentration
Etching
Gallium Alloys
Optical Properties
Point Defects
Raman Spectroscopy
Semiconducting Gallium Compounds
Vapor Phase Epitaxy
Vapors
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145
作者:
Wei TB
;
Yang JK
;
Hu Q
;
Duan RF
;
Huo ZQ
  |  
收藏
  |  
浏览/下载:74/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Cl
Pl
Stacking Fault
Hvpe
Gan
Nonpolar
Chemical-vapor-deposition
Acceptor Pair Emission
Phase Epitaxy
Grown Gan
Semiconductors
Sapphire
Films
Nitride
Magnetoresistance in a nominally undoped InGaN thin film
期刊论文
OAI收割
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 63-66
作者:
Ding K
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  |  
浏览/下载:122/34
  |  
提交时间:2010/04/28
NEGATIVE MAGNETORESISTANCE
DIODES
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW
;
Xu XQ
;
Wang J
;
Liu JM
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:66/8
  |  
提交时间:2011/07/05
IONIZED-IMPURITY-SCATTERING
COMPOSITIONAL INHOMOGENEITY
PHASE-SEPARATION
QUANTUM-WELLS
ALLOY
CATHODOLUMINESCENCE
HETEROSTRUCTURES
SEMICONDUCTORS
TRANSPORT
MOBILITY
Residual impurities and electrical properties of undoped LEC InAs single crystals
期刊论文
OAI收割
半导体学报, 2010, 卷号: 31, 期号: 4, 页码: 042001-1-042001-4
Hu Weijie
;
Zhao Youwen
;
Sun Wenrong
;
Duan Manlong
;
Dong Zhiyuan
;
Yang Jun
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2011/08/16