机构

• 半导体研究所 [4]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2004 [1]
• 1999 [2]
• 1995 [1]

学科主题

• 半导体器件 [4]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes 期刊论文  OAI收割 journal of physics d-applied physics, 2004, 卷号: 37, 期号: 7, 页码: 1007-1011 Chen, XH; Liu, M; Xu, Z; Hou, YB; Teng, F; Xu, XR 收藏  |  浏览/下载：314/62  |  提交时间：2010/03/09 TRANSIENT ELECTROLUMINESCENCE   Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 会议论文  OAI收割 1998 nuclear science symposium (nss), toronto, canada, nov 08-14, 1998 Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 SILICON DETECTORS   Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 期刊论文  OAI收割 ieee transactions on nuclear science, 1999, 卷号: 46, 期号: 3 part 1, 页码: 221-227 Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ 收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12 SILICON DETECTORS   STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES 期刊论文  OAI收割 ieee transactions on nuclear science, 1995, 卷号: 42, 期号: 4, 页码: 219-223 LI Z; CHEN W; DOU L; EREMIN V; KRANER HW; LI CJ; LINDSTROEM G; SPIRITI E 收藏  |  浏览/下载：5/0  |  提交时间：2010/11/17 RADIATION-DAMAGE