机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [10]
• 会议论文 [4]

发表日期

• 2010 [1]
• 2009 [1]
• 2008 [1]
• 2007 [3]
• 2006 [1]
• 2004 [1]
• 更多

学科主题

• 半导体材料 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文  OAI收割 diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：26/0  |  提交时间：2010/12/28 Cubic boron nitride  Doping  Ion beam assisted deposition  X-ray photoelectron spectroscopy  RAY PHOTOELECTRON-SPECTROSCOPY  VAPOR-DEPOSITION  SI  NUCLEATION  GROWTH   In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1-xYxO (Y = Mg, Be) 期刊论文  OAI收割 computational materials science, 2008, 卷号: 44, 期号: 1, 页码: 72-78 Xu, Q; Zhang, XW; Fan, WJ; Li, SS; Xia, JB 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08 Density functional theory  Electronic structure  Alloy  Doping   Simulation of In0.65Ga0.35N single-junction solar cell 期刊论文  OAI收割 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7335-7338 Zhang, X; Wang, X; Xiao, H; Yang, C; Ran, J; Wang, C; Hou, Q; Li, J 收藏  |  浏览/下载：139/1  |  提交时间：2010/03/08 BAND-GAP  INN   Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文  OAI收割 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：102/26  |  提交时间：2010/03/29 homoepitaxy  4H-SiC  multi-epilayer  UV detection  p(+)-pi-n(-)  ULTRAVIOLET PHOTODETECTOR  EPITAXIAL-GROWTH   The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells 会议论文  OAI收割 solar world congress of the international-solar-energy-society, beijing, peoples r china, sep 18-21, 2007 Shi, MJ; Wang, ZG; Zhang, C; Peng, WB; Zeng, XB; Diao, HW; Kong, GL; Liao, XB 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/09 p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 20, 页码: art.no.202102 Wang P (Wang Peng); Chen NF (Chen Nuofu); Yin ZG (Yin Zhigang); Dai RX (Dai Ruixuan); Bai YM (Bai Yiming) 收藏  |  浏览/下载：61/0  |  提交时间：2010/04/11 ZNO THIN-FILMS  MGXZN1-XO  DEVICES  ALLOY   Electrical properties and electroluminescence of 4H-SiC p-n junction diodes 期刊论文  OAI收割 journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278 Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM 收藏  |  浏览/下载：87/0  |  提交时间：2010/03/17 4H-SiC   Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375 Kong MY; Zhang JP; Wang XL; Sun DZ 收藏  |  浏览/下载：98/8  |  提交时间：2010/08/12 impurities  molecular beam epitaxy  nitrides  semiconducting III-V materials  GALLIUM NITRIDE  SAPPHIRE SUBSTRATE  DEFECTS  HETEROSTRUCTURE  SEMICONDUCTORS  STRESS   Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Kong MY; Zhang JP; Wang XL; Sun DZ 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 impurities  molecular beam epitaxy  nitrides  semiconducting III-V materials  GALLIUM NITRIDE  SAPPHIRE SUBSTRATE  DEFECTS  HETEROSTRUCTURE  SEMICONDUCTORS  STRESS