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Chinese Academy of Sciences Institutional Repositories Grid
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高能物理研究所 [6]
宁波材料技术与工程研... [4]
理论物理研究所 [1]
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OAI收割 [11]
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期刊论文 [11]
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2020 [2]
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Physics [11]
Materials ... [2]
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学科主题:Physics
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The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and V-oc of 620 mV
期刊论文
OAI收割
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 卷号: 31, 期号: 8, 页码: 6398-6405
作者:
Fang, Wenzhong
;
Ni, Zitao
;
Wang, Pan
;
Xiang, Chaoyu
;
Sun, Tao
  |  
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2020/12/16
MICROREACTOR-ENCAPSULATION
COPPER(II) COMPLEXES
EFFICIENCY
POLYMER
ROUTE
Single-crystal growth of n-type SnS0.95 by the temperature-gradient technique
期刊论文
OAI收割
VACUUM, 2020, 卷号: 182
作者:
Yin, Yinong
;
Cai, Jianfeng
;
Wang, Hongxiang
;
Xiao, Yukun
;
Hu, Haoyang
  |  
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2020/12/16
HIGH THERMOELECTRIC PERFORMANCE
SNS
SULFIDE
Concentration-dependent color tunability of nitrogen-doped carbon dots and their application for iron(III) detection and multicolor bioimaging
期刊论文
OAI收割
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2018, 卷号: 521, 页码: 33-41
作者:
Wang, Chuanxi
;
Wu, Qian
;
Wang, Xioajie
;
Zhou, Jingdan
;
Wen, Zhuoqi
  |  
收藏
  |  
浏览/下载:215/0
  |  
提交时间:2018/12/04
Graphene Quantum Dots
Turn-on Sensor
Green Synthesis
Living Cells
Photoluminescence Properties
Blue Luminescence
Nanodots
Emission
Fluorescence
Mechanism
Concentration-dependent color tunability of nitrogen-doped carbon dots and their application for iron(III) detection and multicolor bioimaging
期刊论文
OAI收割
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2018, 卷号: 521, 页码: 33-41
作者:
Wang, Chuanxi
;
Wu, Qian
;
Wang, Xioajie
;
Zhou, Jingdan
;
Wen, Zhuoqi
  |  
收藏
  |  
浏览/下载:214/0
  |  
提交时间:2018/12/04
Graphene Quantum Dots
Turn-on Sensor
Green Synthesis
Living Cells
Photoluminescence Properties
Blue Luminescence
Nanodots
Emission
Fluorescence
Mechanism
Local Mn structure and room temperature ferromagnetism in Mn-doped In2O3 films
期刊论文
OAI收割
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 21, 页码: 212411
作者:
An, YK
;
Wang, SQ
;
Duan, LS
;
Liu, JW
;
Wu, ZH;吴忠华
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2016/04/08
The local structure, magnetic, and transport properties of Cr-doped In2O3 films
期刊论文
OAI收割
JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 113, 期号: 15, 页码: 153901
作者:
Wang, SQ
;
An, YK
;
Feng, DQ
;
Wu, ZH
;
Liu, JW;吴忠华
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2016/04/08
Fe-doped InN layers grown by molecular beam epitaxy
期刊论文
OAI收割
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 17, 页码: 171905
作者:
Wang, XQ
;
Liu, ST
;
Ma, DY
;
Zheng, XT
;
Chen, G
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2016/04/08
Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
期刊论文
OAI收割
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 15, 页码: 151907
作者:
Yang, XL
;
Zhu, WX
;
Wang, CD
;
Fang, H
;
Yu, TJ
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2016/06/29
doping profiles
Doppler broadening
ferromagnetic materials
gallium compounds
III-V semiconductors
magnetic thin films
manganese compounds
MOCVD
positron annihilation
semiconductor doping
semiconductor thin films
semimagnetic semiconductors
vacancies (crystal)
wide band gap semiconductors
Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD
期刊论文
OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 12, 页码: 125002
作者:
Yang, XL
;
Chen, ZT
;
Wang, CD
;
Huang, S
;
Fang, H
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2016/06/29
Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films
期刊论文
OAI收割
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 25, 页码: 252101
作者:
Zhao, DG
;
Jiang, DS
;
Yang, H
;
Zhu, JJ
;
Liu, ZS
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2016/06/29