中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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发表日期
  • 2014 [11]
学科主题
  • 光电子学 [11]
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Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of vacuum science & technology b, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 2014, 卷号: 32, 32, 期号: 5, 页码: 051207, 051207
作者:  
He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P
  |  收藏  |  浏览/下载:28/0  |  提交时间:2015/03/25
Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells 期刊论文  OAI收割
journal of vacuum science & technology a, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 2014, 卷号: 32, 32, 期号: 5, 页码: 051503, 051503
作者:  
Yang, J;  Zhao, DG;  Jiang, DS;  Jahn, U;  Chen, P
  |  收藏  |  浏览/下载:27/0  |  提交时间:2015/03/25
Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文  OAI收割
physica status solidi a-applications and materials science, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 2014, 卷号: 211, 211, 期号: 9, 页码: 2157-2160, 2157-2160
作者:  
Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
  |  收藏  |  浏览/下载:19/0  |  提交时间:2015/03/25
Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes 期刊论文  OAI收割
chinese physics b, CHINESE PHYSICS B, 2014, 2014, 卷号: 23, 23, 期号: 2, 页码: 028503, 028503
作者:  
Li, XJ;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P
  |  收藏  |  浏览/下载:15/0  |  提交时间:2015/03/20
Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2014, 2014, 卷号: 105, 105, 期号: 23, 页码: 232104, 232104
作者:  
Shang, ZJ;  Zheng, XH;  Yang, C;  Chen, Y;  Li, B
  |  收藏  |  浏览/下载:14/0  |  提交时间:2015/03/19
Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors 期刊论文  OAI收割
journal of vacuum science & technology b, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 2014, 卷号: 32, 32, 期号: 3, 页码: 031204, 031204
作者:  
Li, XJ;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P
  |  收藏  |  浏览/下载:15/0  |  提交时间:2015/04/02
Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes 期刊论文  OAI收割
optics express, OPTICS EXPRESS, 2014, 2014, 卷号: 22, 22, 期号: 10, 页码: 11392-11398, 11392-11398
作者:  
Le, LC;  Zhao, DG;  Jiang, DS;  Yang, H;  Chen, P
  |  收藏  |  浏览/下载:21/0  |  提交时间:2015/03/25
The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 116, 116, 期号: 16, 页码: 163708, 163708
作者:  
Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.
  |  收藏  |  浏览/下载:16/0  |  提交时间:2015/03/19
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 115, 115, 期号: 16, 页码: 163704, 163704
作者:  
Yang, J;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Yang, H
  |  收藏  |  浏览/下载:25/0  |  提交时间:2015/04/02
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文  OAI收割
chinese physics b, CHINESE PHYSICS B, 2014, 2014, 卷号: 23, 23, 期号: 6, 页码: 068801, 068801
作者:  
Yang, J;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P
  |  收藏  |  浏览/下载:15/0  |  提交时间:2015/04/02