中国科学院机构知识库网格系统: 检索

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	Experiment for direct measurements of short-lived particle dipole moments at LHC 会议论文 OAI收割 Czech Republic, 2022 作者: G. Tonani; A. Merli; F. Martinez Vidal; N. Neri; D. Marangotto \| 收藏 \| 浏览/下载：4/0 \| 提交时间：2023/01/04
	Asteroseismology of the ZZ Ceti and DAZ GD 133 会议论文 OAI收割 Univ Warwick, Coventry, UNITED KINGDOM, JUL 25-29, 2016 作者: Niu, H.; Li, Y.; Jiang, X. J.; Xue, H.; Li, C. \| 收藏 \| 浏览/下载：45/0 \| 提交时间：2018/02/07 Stellar Astrophysics Mesa White-dwarfs Modules Planets
	Measurement of helium-like and hydrogen-like argon spectra using double-crystal X-ray spectrometers on EAST 会议论文 OAI收割 Madison, WI, 2016 作者: B. Lyu; J. Chen; R. J. Hu; F. D. Wang; Y. Y. Li 收藏 \| 浏览/下载：12/0 \| 提交时间：2017/07/26
	Dielectronic recombination of the 4p and 4d open sub-shell tungsten ions 会议论文 OAI收割作者: IOP; Dong, C. Z.; Zhang, Y. Z.; Zhang, G. D.; Fu, Y. B. \| 收藏 \| 浏览/下载：9/0 \| 提交时间：2018/08/20
	Multisensor-multitarget tracking based on hierarchical association only using Range-Doppler measurements 会议论文 OAI收割 IET International Radar Conference 2013, April 14, 2013 - April 16, 2013, Xi'an, China 作者: Zhou J. 收藏 \| 浏览/下载：23/0 \| 提交时间：2014/05/15
	Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文 OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者: Zhang T. 收藏 \| 浏览/下载：36/0 \| 提交时间：2014/05/15
	Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文 OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者: Zhang T. 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn TMGa AsH3 and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power their temperatures were detected by a thermocouple and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm In0.82Ga0.18As absorption layer with the thickness of 2.8 m and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied the curves of the I-V characteristics the range of response spectrum and the detectivity (D*) were obtained. (2013) Trans Tech Publications Switzerland.
	Be-7, B-8+Pb-208 Elastic Scattering at Above-Barrier Energies 会议论文 OAI收割 Texas A&M Univ, Cyclotron Inst, San Antonio, TX, MAY 27-JUN 01, 2012 作者: Wang, J. S.; Yang, Y. Y.; Wang, Q.; Jin, L.; Ma, J. B. \| 收藏 \| 浏览/下载：15/0 \| 提交时间：2018/08/20