中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
  • 半导体材料 [2]
筛选

浏览/检索结果: 共2条,第1-2条 帮助

限定条件    
条数/页: 排序方式:
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文  OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.)
收藏  |  浏览/下载:43/0  |  提交时间:2010/04/11
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文  OAI收割
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Gong, QC (Gong, Q. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Li, JY (Li, J. Y.); Zeng, YP (Zeng, Y. P.); Li, JM (Li, J. M.)
收藏  |  浏览/下载:166/18  |  提交时间:2010/03/29
4H-SiC