机构

• 半导体研究所 [20]

采集方式

• OAI收割 [20]

内容类型

• 期刊论文 [20]

发表日期

• 2016 [2]
• 2015 [2]
• 2014 [1]
• 2013 [12]
• 2012 [1]
• 2000 [2]
• 更多

学科主题

• 半导体器件 [20]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion 期刊论文  OAI收割 nanotechnology, 2016, 卷号: 28, 期号: 4, 页码: 045401 Junjie Kang; Vinh Quang Dang; Hongjian Li; Sungjin Moon; Panpan Li; Yangdoo Kim; Chaehyun Kim; Jinyoung Choi; Hakjong Choi; Zhiqiang Liu; Heon Lee 收藏  |  浏览/下载：26/0  |  提交时间：2017/03/16 Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots 期刊论文  OAI收割 scientific reports, 2016, 卷号: 6, 页码: 35217 Hongjian Li; Panpan Li; Junjie Kang; Jiianfeng Ding; Jun Ma; Yiyun Zhang; Xiaoyan Yi; Guohong Wang 收藏  |  浏览/下载：36/0  |  提交时间：2017/03/16 Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance 期刊论文  OAI收割 ieee photonics technology letters, 2015, 卷号: 27, 期号: 19, 页码: 2004-2006 Panpan Li; Hongjian Li; Yongbing Zhao; Junjie Kang; Zhicong Li; Zhiqiang Liu; Xiaoyan Yi; Jinmin Li; Guohong Wang 收藏  |  浏览/下载：8/0  |  提交时间：2016/04/15 Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes 期刊论文  OAI收割 journal of applied physics, 2015, 卷号: 117, 页码: 073101 Panpan Li; Hongjian Li; Zhi Li; Junjie Kang; Xiaoyan Yi; Jinmin Li; Guohong Wang 收藏  |  浏览/下载：10/0  |  提交时间：2016/04/15 Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 115, 115, 期号: 8, 页码: 083112, 083112 作者:  Li, Z;  Kang, JJ;  Wang, BW;  Li, HJ;  Weng, YH   |  收藏  |  浏览/下载：25/0  |  提交时间：2015/03/19 Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2013, 2013, 卷号: 102, 102, 期号: 1, 页码: 011105, 011105 作者:  Li, Hongjian;  Kang, Junjie;  Li, Panpan;  Ma, Jun;  Wang, Hui   |  收藏  |  浏览/下载：11/0  |  提交时间：2013/10/08 The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes 期刊论文  OAI收割 journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 113, 113, 期号: 23, 页码: 234302, 234302 作者:  Li, Zhi;  Kang, Junjie;  Zhang, Yiyun;  Liu, Zhiqiang;  Wang, Liancheng   |  收藏  |  浏览/下载：13/0  |  提交时间：2014/05/27 Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization 期刊论文  OAI收割 applied physics express, Applied Physics Express, 2013, 2013, 卷号: 6, 6, 期号: 9, 页码: 092101, 092101 作者:  Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang   |  收藏  |  浏览/下载：12/0  |  提交时间：2014/04/09 Design of Shallow Acceptors in GaN through Zinc–Magnium Codoping: First-Principles Calculation 期刊论文  OAI收割 Applied Physics Express, Applied Physics Express, 2013, 2013, 卷号: 6, 6, 期号: 4, 页码: 042104, 042104 作者:  Zhiqiang Liu, Andrew G. Melton, Xiaoyan Yi, Jianwei Wang, Bahadir Kucukgok, Jun Kang, Na Lu, Junxi Wang, Jinmin Li and Ian Ferguson   |  收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09 The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene electrodes 期刊论文  OAI收割 journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 113, 113, 期号: 23, 页码: 234302, 234302 作者:  Li, Zhi;  Kang, Junjie;  Zhang, Yiyun;  Liu, Zhiqiang;  Wang, Liancheng   |  收藏  |  浏览/下载：19/0  |  提交时间：2014/04/09