中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [5]
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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文  OAI收割
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者:  
P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li
收藏  |  浏览/下载:24/0  |  提交时间:2018/07/11
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 116, 116, 期号: 16, 页码: 163708, 163708
作者:  
Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.
  |  收藏  |  浏览/下载:16/0  |  提交时间:2015/03/19
Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth 期刊论文  OAI收割
ecs solid state lett., ECS Solid State Lett., 2013, 2013, 卷号: 2, 2, 期号: 9, 页码: 73-75, 73-75
作者:  
J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz
  |  收藏  |  浏览/下载:17/0  |  提交时间:2014/04/04
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文  OAI收割
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 085017
Wu LL (Wu, L. L.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Chen P (Chen, P.); Le LC (Le, L. C.); Li L (Li, L.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang BS (Zhang, B. S.); Yang H (Yang, H.)
收藏  |  浏览/下载:7/0  |  提交时间:2013/04/02