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• 长春光学精密机械与... [16]
• 西安光学精密机械研究... [1]

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• OAI收割 [17]

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• 会议论文 [17]

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• 2014 [1]
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浏览/检索结果: 共17条，第1-10条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Carrier Localization and Polarized Photoluminescence of GaInP2 Alloy with Spontaneous Atomic Ordering 会议论文  OAI收割 osa topical conference:the 4th advances in optoelectronics and micro/nano-optics, xi’an, china, 2014-09 作者:  J. Q. Ning;  S. J. Xu;  Z. Deng;  Z. C. Su 收藏  |  浏览/下载：20/0  |  提交时间：2015/05/15 A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang L.;  Wang L.;  Wang L.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m  150m and 100m-diameter  with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A  corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power  threshold current  lasing spectra  far-field distribution etc. 2008 SPIE.   Central hole effect on Whispering-Gallery-Mode of triangular lattice photonic crystal microcavity (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Zhang Y.;  Wang L.;  Wang L.;  Wang L.;  Wang Z. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 Whispering-Gallery-Mode (WGM) photonic crystal microcavity is a kind of photonic crystal application and can potentially be used for miniaturized photonic devices  such as thresholdless lasers. In this paper we study the WGM of photonic crystal microcavities focusing on the so called H2 cavities which are formed by removing seven air holes. The WGM in these large-size cavities has some advantages compared with single defect WGM in the view of real device applications. We further add a central air hole in the cavity region to analyze the effect on WGM in the microcavity by finite difference time domain (FDTD) and plane wave expansion (PWE). It is found that the tolerance of WGM is large enough for the fabrication of electrical injection structure. 2008 SPIE.   High power VCSEL device with periodic gain active region - art. no. 67820O 会议论文  OAI收割 2007 作者:  Sun Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：7/0  |  提交时间：2013/03/28 High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Zhang Y.;  Liu Y.;  Liu Y.;  Liu Y.;  Qin L. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.   980nm bottom-emitting VCSEL with an output power of 1.95W 会议论文  OAI收割 2005 作者:  Liu Y.;  Liu J.;  Liu J.;  Liu J.;  Liu Y. 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/28 High-power InGaAs/GaAs VCSEL's two-dimension arrays - art. no. 602816 会议论文  OAI收割 2005 作者:  Liu Y.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：8/0  |  提交时间：2013/03/28 Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser 会议论文  OAI收割 2005 Ning Y. Q.; Sung Y. F.; Jin Z. H.; Wang L. J. 收藏  |  浏览/下载：9/0  |  提交时间：2013/03/28 InGaAs/InGaAsP microavity laser with directional output waveguide 会议论文  OAI收割 2005 作者:  Qin L. 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/28 Simulation and experimental study of high power fiber lasers 会议论文  OAI收割 2004 作者:  Zhang J.;  Liu Y.;  Liu Y.;  Liu Y.;  Zhao L. 收藏  |  浏览/下载：5/0  |  提交时间：2013/03/28