机构

• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [1]

内容类型

• 会议论文 [1]

发表日期

• 2011 [1]

学科主题

筛选

浏览/检索结果: 共1条，第1-1条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.