中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
机构
采集方式
内容类型
发表日期
学科主题
  • 光电子学 [28]
筛选

浏览/检索结果: 共28条，第1-10条 帮助

限定条件    
条数/页： 排序方式：
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文  OAI收割
journal of applied physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
收藏  |  浏览/下载：21/0  |  提交时间：2014/04/30
Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth 期刊论文  OAI收割
ecs solid state lett., ECS Solid State Lett., 2013, 2013, 卷号: 2, 2, 期号: 9, 页码: 73-75, 73-75
作者:  J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz
  |  收藏  |  浏览/下载：17/0  |  提交时间：2014/04/04
Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文  OAI收割
journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 114, 114, 期号: 14, 页码: 143706, 143706
作者:  Le, L. C.;  Zhao, D. G.;  Jiang, D. S.;  Li, L.;  Wu, L. L.
  |  收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09
High efficient GaN-based laser diodes with tunnel junction 期刊论文  OAI收割
applied physics letters, Applied Physics Letters, 2013, 2013, 卷号: 103, 103, 期号: 4, 页码: 043508, 043508
作者:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
  |  收藏  |  浏览/下载：16/0  |  提交时间：2014/04/09
Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文  OAI收割
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104
Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.)
收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02
Coupling coefficient calculation for GaSb-based quantum well distributed feedback lasers with laterally coupled gratings 期刊论文  OAI收割
journal of physics d-applied physics, 2012, 卷号: 45, 期号: 50, 页码: 505109
Wang YB (Wang, Y. B.); Xu Y (Xu, Y.); Zhang Y (Zhang, Y.); Song GF (Song, G. F.); Chen LH (Chen, L. H.)
收藏  |  浏览/下载：10/0  |  提交时间：2013/03/19
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48
Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui)
收藏  |  浏览/下载：12/0  |  提交时间：2013/03/27
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文  OAI收割
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 085017
Wu LL (Wu, L. L.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Chen P (Chen, P.); Le LC (Le, L. C.); Li L (Li, L.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang BS (Zhang, B. S.); Yang H (Yang, H.)
收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 25, 页码: 252110, 252110
作者:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
  |  收藏  |  浏览/下载：17/0  |  提交时间：2013/03/20
Ultra low frequency phase generated carrier demodulation technique for fiber sensors 期刊论文  OAI收割
zhongguo jiguang/chinese journal of lasers, Zhongguo Jiguang/Chinese Journal of Lasers, 2011, 2011, 卷号: 38, 38, 期号: 4, 页码: 405001, 405001
作者:  Wang, Lin;  He, Jun;  Li, Fang;  Liu, Yuliang;  Wang, L.(wlcas@semi.ac.cn)
  |  收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14