机构

• 半导体研究所 [30]

采集方式

• OAI收割 [30]

内容类型

• 期刊论文 [25]
• 会议论文 [5]

发表日期

• 2017 [1]
• 2016 [2]
• 2014 [1]
• 2013 [1]
• 2012 [2]
• 2011 [2]
• 更多

学科主题

• 半导体材料 [30]

筛选

浏览/检索结果: 共30条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Hybrid single-mode laser based on graphene Bragg gratings on silicon 期刊论文  OAI收割 Optics Letters, 2017, 卷号: 42, 期号: 11, 页码: 2134-2137 作者:  ZHENGLIANG REN;  QIANG KAN;  GUANGZHAO RAN;  CHAOYUAN JIN;  LIJUN YUAN 收藏  |  浏览/下载：45/0  |  提交时间：2018/05/31 Measuring magnetic anisotropy with a rotatable ac electromagnet 期刊论文  OAI收割 measurement, 2016, 卷号: 79, 页码: 15-19 Ran Wang; Shuaihua Nie; Jianhua Zhao; Yang Ji 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10 1550 nm Evanescent Hybrid InGaAsP-Si Laser with Buried Ridge Stripe Structure 期刊论文  OAI收割 ieee photonics technology letters, 2016, 卷号: 28, 期号: 10, 页码: 1146-1149 Hongyan Yu; Lijun Yuan; Li Tao; Weixi Chen; Yanping Li; Ying Ding; Guangzhao Ran; Jiaoqing Pan; Wei Wang 收藏  |  浏览/下载：23/0  |  提交时间：2017/03/10 4-lambda InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width 期刊论文  OAI收割 optics express, 2014, 卷号: 22, 期号: 5, 页码: 5448-5454 Tao, L; Yuan, LJ; Li, YP; Yu, HY; Wang, BJ; Kan, Q; Chen, WX; Pan, JQ; Ran, GZ; Wang, W 收藏  |  浏览/下载：17/0  |  提交时间：2015/04/02 Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 6, 页码: 061112 Wang, C.; Qu, H. J.; Chen, W. X.; Ran, G. Z.; Yu, H. Y.; Niu, B.; Pan, J. Q.; Wang, W. 收藏  |  浏览/下载：15/0  |  提交时间：2013/09/22 Bonding InGaAsP/ITO/Si Hybrid Laser With ITO as Cathode and Light-Coupling Material 期刊论文  OAI收割 ieee photonics technology letters, 2012, 卷号: 24, 期号: 8, 页码: 712-714 Hong, T; Li, YP; Chen, WX; Ran, GZ; Qin, GG; Zhu, HL; Liang, S; Wang, Y; Pan, JQ; Wang, W 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/17 DC Characterizations of MQW Tunnel Diode and Laser Diode Hybrid Integration Device 期刊论文  OAI收割 ieee photonics technology letters, 2012, 卷号: 24, 期号: 16, 页码: 1369-1371 Niu B (Niu, Bin); Li YP (Li, Yanping); Hong T (Hong, Tao); Chen WX (Chen, Weixi); Liang S (Liang, Song); Pan JQ (Pan, Jiaoqing); Qiu JF (Qiu, Jifang); Wang C (Wang, Chong); Ran GZ (Ran, Guangzhao); Zhao LJ (Zhao, Lingjuan); Qin GG (Qin, Guogang); Wang W (Wang, Wei) 收藏  |  浏览/下载：21/0  |  提交时间：2013/04/02 High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002 Yin, Haibo; Wang, Xiaoliang; Ran, Junxue; Hu, Guoxin; Zhang, Lu; Xiao, Hongling; Li, Jing; Li, Jinmin 收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium nitride   Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文  OAI收割 ieee international conference on group iv photonics gfp, IEEE International Conference on Group IV Photonics GFP, 2011, 2011, 卷号: 32, 32, 期号: 11, 页码: 114007, 114007 作者:  Li, Zhicong;  Li, Panpan;  Wang, Bing;  Li, Hongjian;  Liang, Meng   |  收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Diodes  Electrostatic devices  Electrostatic discharge  Gallium alloys  Gallium nitride  Light emission  Diodes  Electrostatic Devices  Electrostatic Discharge  Gallium Alloys  Gallium Nitride  Light Emission   A Selective-Area Metal Bonding InGaAsP-Si Laser 期刊论文  OAI收割 ieee photonics technology letters, 2010, 卷号: 22, 期号: 15, 页码: 1141-1143 Hong T (Hong Tao); Ran GZ (Ran Guang-Zhao); Chen T (Chen Ting); Pan JQ (Pan Jiao-Qing); Chen WX (Chen Wei-Xi); Wang Y (Wang Yang); Cheng YB (Cheng Yuan-Bing); Liang S (Liang Song); Zhao LJ (Zhao Ling-Juan); Yin LQ (Yin Lu-Qiao); Zhang JH (Zhang Jian-Hua); Wang W (Wang Wei); Qin GG (Qin Guo-Gang) 收藏  |  浏览/下载：255/27  |  提交时间：2010/10/11 InGaAsP-Si laser  selective-area metal bonding (SAMB)  Si photonics