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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [8]
采集方式
OAI收割 [8]
内容类型
期刊论文 [8]
发表日期
2015 [1]
2013 [2]
2011 [1]
2010 [4]
学科主题
半导体材料 [8]
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Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells
期刊论文
OAI收割
scientific reports, 2015, 卷号: 5, 页码: 14386
X. Rong
;
X. Q. Wang
;
G. Chen
;
X. T. Zheng
;
P. Wang
;
F. J. Xu
;
Z. X. Qin
;
N. Tang
;
Y. H. Chen
;
L. W. Sang
;
M. Sumiya
;
W. K. Ge
;
B. Shen
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2016/03/18
Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
期刊论文
OAI收割
applied physics letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5
G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2014/02/12
Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires
期刊论文
OAI收割
RSC Advances, 2013, 期号: 43, 页码: 19834-19839
Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2014/02/12
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
OAI收割
materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011
作者:
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2012/06/14
Carrier concentration
Etching
Gallium alloys
Optical properties
Point defects
Raman spectroscopy
Semiconducting gallium compounds
Vapor phase epitaxy
Vapors
Carrier Concentration
Etching
Gallium Alloys
Optical Properties
Point Defects
Raman Spectroscopy
Semiconducting Gallium Compounds
Vapor Phase Epitaxy
Vapors
Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Liu JQ (Liu J. Q.)
;
Xu B (Xu B.)
;
Ye XL (Ye X. L.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:263/60
  |  
提交时间:2010/09/07
Quantum dots
Temperature dependent
Photoluminescence
Surface localized centers
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
期刊论文
OAI收割
nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Liu JM (Liu J. M.)
;
Liu XL (Liu X. L.)
;
Xu XQ (Xu X. Q.)
;
Wang J (Wang J.)
;
Li CM (Li C. M.)
;
Wei HY (Wei H. Y.)
;
Yang SY (Yang S. Y.)
;
Zhu QS (Zhu Q. S.)
;
Fan YM (Fan Y. M.)
;
Zhang XW (Zhang X. W.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:144/21
  |  
提交时间:2010/08/17
Valence band offset
w-InN/h-BN heterojunction
X-ray photoelectron spectroscopy
Conduction band offset
Valence band offset
NEGATIVE ELECTRON-AFFINITY
INDIUM NITRIDE
WURTZITE GAN
SURFACE
FILM
ALN
TRANSPORT
EMISSION
NAXWO3
GROWTH
Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
期刊论文
OAI收割
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Liu JQ (Liu J. Q.)
;
Jia CH (Jia C. H.)
;
Zhou GY (Zhou G. Y.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:335/26
  |  
提交时间:2010/08/17
CARRIER RELAXATION
STATES
SUPERLATTICES
CONFINEMENT
LASER
Strong circular photogalvanic effect in ZnO epitaxial films
期刊论文
OAI收割
applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 041907
Zhang Q (Zhang Q.)
;
Wang XQ (Wang X. Q.)
;
Yin CM (Yin C. M.)
;
Xu FJ (Xu F. J.)
;
Tang N (Tang N.)
;
Shen B (Shen B.)
;
Chen YH (Chen Y. H.)
;
Chang K (Chang K.)
;
Ge WK (Ge W. K.)
;
Ishitani Y (Ishitani Y.)
;
Yoshikawa A (Yoshikawa A.)
收藏
  |  
浏览/下载:276/88
  |  
提交时间:2010/09/07
II-VI semiconductors
photoconductivity
photovoltaic effects
semiconductor epitaxial layers
spin-orbit interactions
valence bands
wide band gap semiconductors
zinc compounds