中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 外文期刊 [6]
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HIGH CURRENT, MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH f(t) OF 176GHz 外文期刊  OAI收割
2009
作者:  
Cheng, W;  Jin, Z;  Qi, M;  Xu, AH;  Liu, XY
  |  收藏  |  浏览/下载:20/0  |  提交时间:2010/11/26
Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with f(max) of 305 GHz 外文期刊  OAI收割
2008
作者:  
Jin, Z;  Su, Y;  Cheng, W;  Liu, X;  Xu, A
  |  收藏  |  浏览/下载:18/0  |  提交时间:2010/11/26
High current multi-finger InGaAs/InP double heterojunction bipolar transistor with the maximum oscillation frequency 253 GHz 外文期刊  OAI收割
2008
作者:  
Jin, Z;  Su, YB;  Cheng, W;  Liu, XY;  Xu, AH
  |  收藏  |  浏览/下载:15/0  |  提交时间:2010/11/26
High-breakdown-voltage submicron InGaAs/InP double heterojunction bipolar transistor with f(t)=170 GHz and f(max)=253GHz 外文期刊  OAI收割
2008
作者:  
Jin, Z;  Su, YB;  Cheng, W;  Liu, XY;  Xu, AH
  |  收藏  |  浏览/下载:8/0  |  提交时间:2010/11/26
High-speed InGaAs/InP double heterostructure bipolar transistor with high breakdown voltage 外文期刊  OAI收割
2008
作者:  
Jin, Z;  Su, YB;  Cheng, W;  Liu, XY;  Xu, AH
  |  收藏  |  浏览/下载:10/0  |  提交时间:2010/11/26
The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy 外文期刊  OAI收割
2002
作者:  
Wang, Z;  Sun, DL;  Hu, JF;  Cui, DL;  Xu, XH
  |  收藏  |  浏览/下载:16/0  |  提交时间:2010/11/26