机构

• 半导体研究所 [15]

采集方式

• OAI收割 [15]

内容类型

• 期刊论文 [15]

发表日期

• 2017 [2]
• 2016 [5]
• 2015 [1]
• 2007 [2]
• 2006 [5]

学科主题

• 光电子学 [15]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文  OAI收割 Scientific Reports, 2017, 卷号: 7, 页码: 44850 作者:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu   |  收藏  |  浏览/下载：23/0  |  提交时间：2018/11/30 Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文  OAI收割 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 作者:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN 收藏  |  浏览/下载：20/0  |  提交时间：2018/07/11 XPS study of impurities in Si-doped AlN film 期刊论文  OAI收割 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10 The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割 applied physics a, 2016, 卷号: 122, 期号: 9 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10 The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文  OAI收割 physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228 X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10 Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割 materials technology, 2016 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：22/0  |  提交时间：2017/03/10 Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文  OAI收割 applied optics, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711 X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; L. C. LE; W. LIU; X. G. HE; X. J. LI; F. LIANG; L. Q. ZHANG; J. Q. LIU; H. YANG 收藏  |  浏览/下载：17/0  |  提交时间：2016/03/23 The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis 期刊论文  OAI收割 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1113-1117 Wang, XL (Wang, X. L.); Zhao, DG (Zhao, D. G.); Jahn, U (Jahn, U.); Ploog, K (Ploog, K.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.); Liang, JW (Liang, J. W.) 收藏  |  浏览/下载：68/0  |  提交时间：2010/03/29 PHOTODIODES   Silicon bench for passive coupling and packaging of high-frequency optoelectronic devices 期刊论文  OAI收割 ieee transactions on advanced packaging, 2007, 卷号: 30, 期号: 1, 页码: 34-37 Yang, H (Yang, H.); Zhu, HL (Zhu, H. L.); Xie, HY (Xie, H. Y.); Zhao, LJ (Zhao, L. J.); Zhou, F (Zhou, F.); Wang, W (Wang, W.) 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/29 coplanar waveguide (CPW)