中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [41]
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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文  OAI收割
Scientific Reports, 2017, 卷号: 7, 页码: 44850
作者:  
J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu
  |  收藏  |  浏览/下载:22/0  |  提交时间:2018/11/30
Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文  OAI收割
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39
作者:  
J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu
  |  收藏  |  浏览/下载:17/0  |  提交时间:2018/11/30
Different annealing temperature suitable for different Mg doped P-GaN 期刊论文  OAI收割
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
作者:  
S.T. Liu;  J. Yang;  D.G. Zhao;  D.S. Jiang;  F. Liang
收藏  |  浏览/下载:28/0  |  提交时间:2018/07/11
Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文  OAI收割
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者:  
P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li
收藏  |  浏览/下载:24/0  |  提交时间:2018/07/11
XPS study of impurities in Si-doped AlN film 期刊论文  OAI收割
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:28/0  |  提交时间:2017/03/10
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
applied physics a, 2016, 卷号: 122, 期号: 9
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10
The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文  OAI收割
physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228
X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang
收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10
Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文  OAI收割
journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang
收藏  |  浏览/下载:19/0  |  提交时间:2017/03/10
Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文  OAI收割
superlattices and microstructures, 2016, 卷号: 97, 页码: 186-192
X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10