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  • 纳米科技与材料物理... [17]
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HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2010
G. He + L. D. Zhang+ M. Liu+Z. Q. Sun
收藏  |  浏览/下载:11/0  |  提交时间:2011/12/14
Effect of Ti incorporation on the interfacial and optical properties of HfTio thin films 期刊论文  OAI收割
journal of applied physics, 2010
M. Liu; L. D. Zhang; G. He; X. J. Wang; M. Fang
收藏  |  浏览/下载:7/0  |  提交时间:2012/05/15
hfO2-GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-deived aluminum oxynitride interfacial passivation layer 期刊论文  OAI收割
applied physics letters, 2010
G. He; L. D. Zhang; M. Liu; Z. Q. Sun
收藏  |  浏览/下载:7/0  |  提交时间:2012/05/04
Wide bandwidth lasing randomly assembled ZnS/ZnO biaxial nanobelt 期刊论文  OAI收割
applied physics letters96, 141115 (2010), 2010
H. Y. Yang; S. F. Yu; J. Yan; L. D. Zhang
收藏  |  浏览/下载:12/0  |  提交时间:2012/05/02
Thickness-modulated optical dielectric constants and band alignments of HfOxNy gate dielectrics 期刊论文  OAI收割
journal of applied physics, 2009, 期号: 105
G. He; L. D. Zhang; M. Liu; J. P. Zhang; X. J. Wang; C. M. Zhen
收藏  |  浏览/下载:5/0  |  提交时间:2010/03/18
Thermal nitridation passivation dependent band offset and electrical properties of AlOxNy /GaAs gate stacks 期刊论文  OAI收割
applied physics letters, 2009, 期号: 95
G. He; L. D. Zhang; M. Liu
收藏  |  浏览/下载:8/0  |  提交时间:2010/03/18
Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures 期刊论文  OAI收割
journal of applied physics, 2007, 期号: 101
M. Liu; Q. Fang; G. He; L. Q. Zhu; L. D. Zhang
收藏  |  浏览/下载:11/0  |  提交时间:2010/07/15
Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures 期刊论文  OAI收割
journal of applied physics, 2007, 期号: 102
J. P. Zhang; L. D. Zhang; L. Q. Zhu
收藏  |  浏览/下载:9/0  |  提交时间:2010/07/15
Size-dependent optical and electrochemical band gaps of ZnS nanorods fabricated through single molecule precursor route 期刊论文  OAI收割
applied physics letters, 2007, 期号: 90
B. Y. Geng; X. W. Liu; J. Z. Ma; Q. B. Du; L. D. Zhang
收藏  |  浏览/下载:7/0  |  提交时间:2010/07/16
Thermal stability and energy-band alignment of nitrogen-incorporated ZrO2 films on Si(100) 期刊论文  OAI收割
applied physics letters, 2006, 期号: 88
L. Q. Zhu; L. D. Zhang; G. H. Li; G. He
收藏  |  浏览/下载:20/0  |  提交时间:2010/08/16