中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
  • 光电子学 [31]
筛选

浏览/检索结果: 共31条,第1-10条 帮助

限定条件    
条数/页: 排序方式:
Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文  OAI收割
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
作者:  
J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG
  |  收藏  |  浏览/下载:21/0  |  提交时间:2018/11/30
Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文  OAI收割
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者:  
X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
收藏  |  浏览/下载:19/0  |  提交时间:2018/07/11
Different annealing temperature suitable for different Mg doped P-GaN 期刊论文  OAI收割
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
作者:  
S.T. Liu;  J. Yang;  D.G. Zhao;  D.S. Jiang;  F. Liang
收藏  |  浏览/下载:28/0  |  提交时间:2018/07/11
Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文  OAI收割
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者:  
P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li
收藏  |  浏览/下载:24/0  |  提交时间:2018/07/11
Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文  OAI收割
journal of alloys and compounds, 2015, 卷号: 625, 页码: 266–270
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; M. Shi; D.M. Zhao; X. Li; J.P. Liu; S.M. Zhang; H. Wang; H. Yang
收藏  |  浏览/下载:24/0  |  提交时间:2016/03/23
Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文  OAI收割
optics express, 2015, 卷号: 23, 期号: 12, 页码: 15935
W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
收藏  |  浏览/下载:19/0  |  提交时间:2016/03/23
A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文  OAI收割
superlattices and microstructures, 2015, 卷号: 80, 期号: 2015, 页码: 111–117
X. Li; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; M. Shi; D.M. Zhao; W. Liu; J.J. Zhu; S.M. Zhang; H. Yang
收藏  |  浏览/下载:23/0  |  提交时间:2016/03/23
The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 116, 116, 期号: 16, 页码: 163708, 163708
作者:  
Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.
  |  收藏  |  浏览/下载:16/0  |  提交时间:2015/03/19
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文  OAI收割
journal of applied physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
收藏  |  浏览/下载:20/0  |  提交时间:2014/04/30
Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文  OAI收割
journal of crystal growth, 2013, 卷号: 372, 页码: 43-48
Su, X. J.; Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zeng, X. H.; Zhang, J. C.; Cai, D. M.; Zhou, T. F.; Liu, Z. H.; Yang, H.
收藏  |  浏览/下载:11/0  |  提交时间:2013/08/27