机构

• 半导体研究所 [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [6]
• 会议论文 [2]

发表日期

• 2009 [1]
• 2008 [4]
• 2005 [2]
• 2001 [1]

学科主题

• 半导体物理 [8]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文  OAI收割 acta physica sinica, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957 Zhang S (Zhang Shuang); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Duan LH (Duan Li-Hong); Liu WB (Liu Wen-Bao); Jiang DS (Jiang De-Sheng); Yang H (Yang Hui) 收藏  |  浏览/下载：137/40  |  提交时间：2010/03/08 GaN   Distributed Feedback Laser with Sampled Grating 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4162-4164 Wang H; Zhu HL; Jia LH; Chen XF; Li JS; Wang W 收藏  |  浏览/下载：14/0  |  提交时间：2010/03/08 TUNING RANGE   Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283 作者:  Ji L;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：60/5  |  提交时间：2010/03/08 Photoelectric characteristics of metal/InGaN/GaN heterojunction structure 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 16, 页码: art. no. 165108 Sun, X; Liu, WB; Jiang, DS; Liu, ZS; Zhang, S; Wang, LL; Wang, H; Zhu, JJ; Duan, LH; Wang, YT; Zhao, DG; Zhang, SM; Yang, H 收藏  |  浏览/下载：64/0  |  提交时间：2010/03/08 FUNDAMENTAL-BAND GAP  IN1-XGAXN ALLOYS  INN   Fabrication and optical characterization of GaN-based nanopillar light emitting diodes 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3485-3488 Zhu, JH; Zhang, SM; Sun, X; Zhao, DG; Zhu, JJ; Liu, ZS; Jiang, DS; Duan, LH; Wang, H; Shi, YS; Liu, SY; Yang, H 收藏  |  浏览/下载：57/0  |  提交时间：2010/03/08 INDUCTIVELY-COUPLED PLASMA  ARRAYS  NANOSTRUCTURES  LUMINESCENCE  NANORODS   Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells 会议论文  OAI收割 conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004 Xu Y; Zhu XP; Song GF; Cao Q; Guo L; Li YZ; Chen LH 收藏  |  浏览/下载：163/42  |  提交时间：2010/03/29 quantum well intermixing   Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation 会议论文  OAI收割 conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004 Xu Y; Zhu XP; Gan QQ; Song GF; Cao Q; Guo, L; Li YZ; Chen LH 收藏  |  浏览/下载：574/277  |  提交时间：2010/03/29 valence band mixing   Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency 期刊论文  OAI收割 applied physics letters, 2001, 卷号: 79, 期号: 18, 页码: 2985-2986 Guo X; Shen GD; Wang GH; Zhu WJ; Du JY; Gao G; Zou DS; Chen YH; Ma XY; Chen LH 收藏  |  浏览/下载：99/8  |  提交时间：2010/08/12