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Determination of dynamic property of rock joints based on SHPB tests 会议论文  OAI收割
Suzhou, PEOPLES R CHINA, MAY 18-19, 2016
作者:  
Li, J. C.;  Li, H. B.;  Chen, X.;  Zou, Y.
  |  收藏  |  浏览/下载:13/0  |  提交时间:2018/06/05
Initial measurements of plasma current and electron density profiles using a polarimeter/interferometer (POINT) for long pulse operation in EAST 会议论文  OAI收割
Madison, WI, 2016
作者:  
H. Q. Liu;  J. P. Qian;  Y. X. Jie;  W. X. Ding;  D. L. Brower
收藏  |  浏览/下载:13/0  |  提交时间:2017/07/24
Structural design and simulation analysis of ejector used in automotive power steering oil discharge equipment (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Mechanical Engineering, Materials Science and Civil Engineering, ICMEMSCE 2012, August 18, 2012 - August 20, 2012, Harbin, China
Cheng K.; Zou H.; Kong X.; Tang J.
收藏  |  浏览/下载:17/0  |  提交时间:2013/03/25
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:36/0  |  提交时间:2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:20/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Structural design and simulation analysis of ejector used in automotive power steering oil discharge equipment 会议论文  OAI收割
2012 International Conference on Mechanical Engineering, Materials Science and Civil Engineering, ICMEMSCE 2012, August 18, 2012 - August 20, 2012, Harbin, China, August 18, 2012 - August 20
Cheng K.; Zou H.; Kong X.; Tang J.
收藏  |  浏览/下载:10/0  |  提交时间:2014/05/15
InGaAs nanoflowers grown by MOCVD (EI CONFERENCE) 会议论文  OAI收割
2012 Spring International Conference on Material Sciences and Technology, MST-S, May 27, 2012 - May 30, 2012, Xi'an, China
作者:  
Zhang T.
收藏  |  浏览/下载:13/0  |  提交时间:2013/03/25
Investigation of Grouted Rock Bolts Using Guided Ultrasonic Waves 会议论文  OAI收割
Shandong Univ Sci & Technol, Qingdao, OCT 15-17, 2010
作者:  
Zou D. H. Steve;  Cheng J. L.;  Yue R. J.;  Yang F. Z.;  Cui Y.
  |  收藏  |  浏览/下载:29/0  |  提交时间:2020/05/14
The structural transition of Gd2O3 nanoparticles induced by high pressure (EI CONFERENCE) 会议论文  OAI收割
作者:  
Zhang J.;  Li D.;  Wang X.;  Wang X.;  Wang X.
收藏  |  浏览/下载:17/0  |  提交时间:2013/03/25
Ability-based educational reform: A three-year-period practice 会议论文  OAI收割
Beijing, 2004
作者:  
J. N. Shi;  X. H. Song;  J. S. Cui;  Z. K. Liu;  Z. L. Zou
  |  收藏  |  浏览/下载:3/0  |  提交时间:2011/08/22