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CAS IR Grid
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长春光学精密机械与物... [6]
成都山地灾害与环境研... [1]
心理研究所 [1]
武汉岩土力学研究所 [1]
合肥物质科学研究院 [1]
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OAI收割 [10]
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会议论文 [10]
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2016 [2]
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教育心理学 [1]
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Determination of dynamic property of rock joints based on SHPB tests
会议论文
OAI收割
Suzhou, PEOPLES R CHINA, MAY 18-19, 2016
作者:
Li, J. C.
;
Li, H. B.
;
Chen, X.
;
Zou, Y.
  |  
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2018/06/05
Initial measurements of plasma current and electron density profiles using a polarimeter/interferometer (POINT) for long pulse operation in EAST
会议论文
OAI收割
Madison, WI, 2016
作者:
H. Q. Liu
;
J. P. Qian
;
Y. X. Jie
;
W. X. Ding
;
D. L. Brower
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2017/07/24
Structural design and simulation analysis of ejector used in automotive power steering oil discharge equipment (EI CONFERENCE)
会议论文
OAI收割
2012 International Conference on Mechanical Engineering, Materials Science and Civil Engineering, ICMEMSCE 2012, August 18, 2012 - August 20, 2012, Harbin, China
Cheng K.
;
Zou H.
;
Kong X.
;
Tang J.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/03/25
The structure of ejector used in automotive power steering oil discharge equipment is designed in accordance with the theory of gas-liquid ejector.The two important parameters of the ejector are elected respectively to five values and then 25 ejector models are obtained by the permutations and combinations.The ejector's CFD model is created by Fluent module of Ansys
then it is divided into a grid and analyzed. Analyse its pressure distribution and velocity vector
which provides the optimal size for the manufacture of the ejectors and a theoretical basis for experiment. (2013) Trans Tech Publications
Switzerland.
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique
会议论文
OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:
Zhang T.
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE)
会议论文
OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:
Zhang T.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn
TMGa
AsH3
and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power
their temperatures were detected by a thermocouple
and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm
In0.82Ga0.18As absorption layer with the thickness of 2.8 m
and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied
the curves of the I-V characteristics
the range of response spectrum
and the detectivity (D*) were obtained. (2013) Trans Tech Publications
Switzerland.
Structural design and simulation analysis of ejector used in automotive power steering oil discharge equipment
会议论文
OAI收割
2012 International Conference on Mechanical Engineering, Materials Science and Civil Engineering, ICMEMSCE 2012, August 18, 2012 - August 20, 2012, Harbin, China, August 18, 2012 - August 20
Cheng K.
;
Zou H.
;
Kong X.
;
Tang J.
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2014/05/15
InGaAs nanoflowers grown by MOCVD (EI CONFERENCE)
会议论文
OAI收割
2012 Spring International Conference on Material Sciences and Technology, MST-S, May 27, 2012 - May 30, 2012, Xi'an, China
作者:
Zhang T.
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2013/03/25
InGaAs nanoflowers have been prepared on InP substrates by MOCVD
using TMIn
TMGa and AsH3 as reactive precursors at 420 C. Through observation by scanning electron microscopy
we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared
when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As. (2012) Trans Tech Publications
Switzerland.
Investigation of Grouted Rock Bolts Using Guided Ultrasonic Waves
会议论文
OAI收割
Shandong Univ Sci & Technol, Qingdao, OCT 15-17, 2010
作者:
Zou D. H. Steve
;
Cheng J. L.
;
Yue R. J.
;
Yang F. Z.
;
Cui Y.
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2020/05/14
Ultrasonic guided waves
Grouted rock bolts
Grout quality
Bolt tension
The structural transition of Gd2O3 nanoparticles induced by high pressure (EI CONFERENCE)
会议论文
OAI收割
作者:
Zhang J.
;
Li D.
;
Wang X.
;
Wang X.
;
Wang X.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/03/25
The structural transition of nanosize Gd2O3 is studied using high pressure energy dispersive x-ray diffraction and high pressure photoluminescence. The original structure of the nanosized sample shows a mixture of cubic and monoclinic structure. Our results show that the cubic and most of the monoclinic structure turns into hexagonal structure above 10.35GPa. But a small proportion of monoclinic structure can be present up to the highest pressure
36.2GPa. When the pressure is released
the hexagonal structure partly reverts to monoclinic structure
so the sample shows a mixture of hexagonal and monoclinic structure. The structural transition from monoclinic to hexagonal structure is reversible. IOP Publishing Ltd.
Ability-based educational reform: A three-year-period practice
会议论文
OAI收割
Beijing, 2004
作者:
J. N. Shi
;
X. H. Song
;
J. S. Cui
;
Z. K. Liu
;
Z. L. Zou
  |  
收藏
  |  
浏览/下载:3/0
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提交时间:2011/08/22