机构

• 半导体研究所 [35]

采集方式

• OAI收割 [35]

内容类型

• 期刊论文 [32]
• 会议论文 [3]

发表日期

• 2011 [10]
• 2010 [3]
• 2008 [1]
• 2007 [1]
• 2006 [3]
• 2005 [1]
• 更多

学科主题

• 半导体材料 [35]

筛选

浏览/检索结果: 共35条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Hybrid polymer-CdSe solar cells with a ZnO nanoparticle buffer layer for improved efficiency and lifetime 期刊论文  OAI收割 journal of materials chemistry, 2011, 卷号: 21, 期号: 11, 页码: 3814-3817 Qian, Lei; Yang, Jihua; Zhou, Renjia; Tang, Aiwei; Zheng, Ying; Tseng, Teng-Kuan; Bera, Debasis; Xue, Jiangeng; Holloway, Paul. H. 收藏  |  浏览/下载：113/0  |  提交时间：2012/06/14 Buffer layers  Cadmium alloys  Cadmium compounds  Conversion efficiency  Open circuit voltage  Optical waveguides  Solar cells  Zinc oxide   Microstructure and electrical properties of Y(NO3)3·6H2O-doped ZnO-Bi2O3-based varistor ceramics 期刊论文  OAI收割 journal of alloys and compounds, 2011, 卷号: 509, 期号: 38, 页码: 9312-9317 Xu, Dong; Cheng, Xiaonong; Yuan, Hongming; Yang, Juan; Lin, Yuanhua 收藏  |  浏览/下载：46/0  |  提交时间：2012/06/14 Ceramic materials  Degradation  Microstructure  Rare earth alloys  Rare earths  Varistors  Zinc oxide   Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows 期刊论文  OAI收割 applied physics a: materials science and processing, 2011, 页码: 1-5 Jia, C.H.; Chen, Y.H.; Zhang, B.; Liu, X.L.; Yang, S.Y.; Zhang, W.F.; Wang, Z.G. 收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Absorption  Absorption spectroscopy  Crystal atomic structure  Epitaxial growth  Metallorganic chemical vapor deposition  Optical properties  Organic chemicals  Strontium alloys  Strontium titanates  X ray diffraction  Zinc sulfide   InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402 作者:  Hou QF;  Yin HB 收藏  |  浏览/下载：43/6  |  提交时间：2011/07/05 InGaN  solar cell  multiple quantum wells  IN1-XGAXN ALLOYS  BAND-GAP  INN   Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文  OAI收割 applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721 作者:  Jin P 收藏  |  浏览/下载：53/4  |  提交时间：2011/07/07 Photoluminescence  Raman scattering  Pulsed atomic layer epitaxy  AlGaN alloys   Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.50 作者:  Wei HY;  Song HP;  Zhang B 收藏  |  浏览/下载：63/2  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  CORE-LEVEL PHOTOEMISSION  SB-DOPED SNO2  INN  GROWTH  GAN  NAXWO3  ALLOYS  GREEN  STATE   Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang   |  收藏  |  浏览/下载：29/0  |  提交时间：2012/06/14 Carrier concentration  Etching  Gallium alloys  Optical properties  Point defects  Raman spectroscopy  Semiconducting gallium compounds  Vapor phase epitaxy  Vapors  Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors   Theoretical study of polarization-doped GaN-based light-emitting diodes 期刊论文  OAI收割 applied physics letters, Applied Physics Letters, 2011, 2011, 卷号: 98, 98, 期号: 10, 页码: 101110, 101110 作者:  Zhang, L.;  Ding, K.;  Liu, N.X.;  Wei, T.B.;  Ji, X.L.   |  收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14 Electron injection  Gallium alloys  Gallium nitride  Light  Light emission  Organic light emitting diodes(OLED)  Polarization  Electron Injection  Gallium Alloys  Gallium Nitride  Light  Light Emission  Organic Light Emitting Diodes(Oled)  Polarization   Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文  OAI收割 ieee international conference on group iv photonics gfp, IEEE International Conference on Group IV Photonics GFP, 2011, 2011, 卷号: 32, 32, 期号: 11, 页码: 114007, 114007 作者:  Li, Zhicong;  Li, Panpan;  Wang, Bing;  Li, Hongjian;  Liang, Meng   |  收藏  |  浏览/下载：18/0  |  提交时间：2012/06/14 Diodes  Electrostatic devices  Electrostatic discharge  Gallium alloys  Gallium nitride  Light emission  Diodes  Electrostatic Devices  Electrostatic Discharge  Gallium Alloys  Gallium Nitride  Light Emission   Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108 作者:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW   |  收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05 GaN-based  LED  Al composition  electron blocking layer  TEMPERATURE  ALLOYS  MOVPE  Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe