机构

• 宁波材料技术与工程研... [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [3]

内容类型

• 会议论文 [3]

发表日期

• 2014 [1]
• 2009 [1]
• 2006 [1]

学科主题

• Chemistry [1]
• Engineerin... [1]
• Materials ... [1]
• Metallurgy... [1]
• Polymer Sc... [1]

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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Development and applications of Fe- and Co-based bulk glassy alloys and their prospects 会议论文  OAI收割 JUN 30-JUL 05, 2013 作者:  Inoue, A.;  Kong, F. L.;  Man, Q. K.;  Shen, B. L.;  Li, R. W.   |  收藏  |  浏览/下载：9/0  |  提交时间：2021/12/02 SOFT-MAGNETIC-PROPERTIES  HIGH SATURATION MAGNETIZATION  MOLD CASTING METHOD  FORMING ABILITY  METALLIC GLASSES  AMORPHOUS-ALLOYS  30 MM  CRYSTALLIZATION BEHAVIOR  MECHANICAL-PROPERTIES  CORROSION-RESISTANCE   Preparation and Characterization of Poly(butylene terephthalate)/Silica Nanocomposites 会议论文  OAI收割 JUN 01-05, 2006 作者:  Yao, Xiayin;  Tian, Xingyou;  Zhang, Xian;  Zheng, Kang;  Zheng, Jin   |  收藏  |  浏览/下载：2/0  |  提交时间：2021/12/02 ISOTHERMAL CRYSTALLIZATION KINETICS  PHASE-CHANGE  BEHAVIOR  BLENDS  POLYETHYLENE  POLYMERS  COMPATIBILIZATION  MONTMORILLONITE  POLYMERIZATION  MORPHOLOGY   Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.