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  • 半导体材料 [174]
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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L; Zhou, HY; Qu, SC; Wang, ZG
收藏  |  浏览/下载:90/0  |  提交时间:2012/02/06
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  
Jia CH;  Song HP
收藏  |  浏览/下载:118/2  |  提交时间:2011/07/05
Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows 期刊论文  OAI收割
applied physics a: materials science and processing, 2011, 页码: 1-5
Jia, C.H.; Chen, Y.H.; Zhang, B.; Liu, X.L.; Yang, S.Y.; Zhang, W.F.; Wang, Z.G.
收藏  |  浏览/下载:20/0  |  提交时间:2012/06/14
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  
Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载:41/3  |  提交时间:2011/07/05
Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文  OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306
Deng, QW; Wang, XL; Xiao, HL; Wang, CM; Yin, HB; Chen, H; Lin, DF; Li, JM; Wang, ZG; Hou, X
收藏  |  浏览/下载:15/0  |  提交时间:2012/01/06
Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文  OAI收割
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001
Yan, Guoguo; Sun, Guosheng; Wu, Hailei; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载:23/0  |  提交时间:2012/06/14
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文  OAI收割
journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002
Yin, Haibo; Wang, Xiaoliang; Ran, Junxue; Hu, Guoxin; Zhang, Lu; Xiao, Hongling; Li, Jing; Li, Jinmin
收藏  |  浏览/下载:20/0  |  提交时间:2012/06/14
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文  OAI收割
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载:23/0  |  提交时间:2012/06/14
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文  OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M; Zeng YP; Wang JX; Hu Q
收藏  |  浏览/下载:49/2  |  提交时间:2011/07/05
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文  OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:  
Wei HY;  Song HP;  Zhang B
收藏  |  浏览/下载:63/2  |  提交时间:2011/07/05