机构

• 半导体研究所 [130]

采集方式

• OAI收割 [130]

内容类型

• 期刊论文 [117]
• 会议论文 [13]

发表日期

• 2011 [11]
• 2010 [4]
• 2009 [5]
• 2008 [9]
• 2007 [1]
• 2006 [13]
• 更多

学科主题

• 半导体物理 [130]

筛选

浏览/检索结果: 共130条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy 期刊论文  OAI收割 physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 393-395, 393-395 作者:  Wang, S.L.;  Meng, K.K.;  Chen, L.;  Xu, P.F.;  Meng, H.J.   |  收藏  |  浏览/下载：68/0  |  提交时间：2012/06/14 Drop formation  Epitaxial growth  Ferromagnetic materials  Ferromagnetism  Gallium alloys  High resolution transmission electron microscopy  Magnetic semiconductors  Manganese  Semiconducting silicon  Semiconductor growth  Semiconductor quantum dots  Drop Formation  Epitaxial Growth  Ferromagnetic Materials  Ferromagnetism  Gallium Alloys  High Resolution Transmission Electron Microscopy  Magnetic Semiconductors  Manganese  Semiconducting Silicon  Semiconductor Growth  Semiconductor Quantum Dots   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329 作者:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng   |  收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium arsenide  Growth(materials)  Molecular beam epitaxy  Semiconducting gallium  Semiconducting indium  Semiconductor quantum wells  Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells   Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54320, 54320 作者:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ   |  收藏  |  浏览/下载：14/0  |  提交时间：2012/01/06 WELLS  RELAXATION  HOLE  PHOTOLUMINESCENCE  SEMICONDUCTORS  LOCALIZATION  TRANSITIONS  EXCITONS  CARRIERS  GROWTH  Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth   Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文  OAI收割 chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 1, 页码: article no.18102, Article no.18102 作者:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y   |  收藏  |  浏览/下载：105/7  |  提交时间：2011/07/05 molecular beam epitaxy  anti-phase domain  GaAs/Ge interface  CHEMICAL VAPOR-DEPOSITION  JUNCTION SOLAR-CELLS  DOMAIN-FREE GROWTH  TEMPERATURE  QUALITY  FUTURE  Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future   Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 2, 页码: article no.20703, Article no.20703 作者:  Wang XP;  Yang XH;  Han Q;  Ju YL;  Du Y   |  收藏  |  浏览/下载：56/7  |  提交时间：2011/07/05 V-groove substrate  quantum wires  GaAs  EPITAXIAL-GROWTH  TRANSISTOR  V-groove Substrate  Quantum Wires  Gaas  Epitaxial-growth  Transistor   Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain 期刊论文  OAI收割 journal of raman spectroscopy, JOURNAL OF RAMAN SPECTROSCOPY, 2011, 2011, 卷号: 42, 42, 期号: 6, 页码: 1388-1391, 1388-1391 作者:  Zhang, J;  Tan, PH;  Zhao, WJ;  Lu, J;  Zhao, JH   |  收藏  |  浏览/下载：22/0  |  提交时间：2012/01/06 Raman spectroscopy  ultrathin Fe(3)O(4) film  crystal orientation  strain  phonon strain-shift coefficient  PULSED-LASER DEPOSITION  THIN-FILMS  SPIN-TRANSPORT  MAGNETITE  SEMICONDUCTORS  SPINTRONICS  SCATTERING  CORROSION  DEVICES  GROWTH  Raman Spectroscopy  Ultrathin Fe(3)o(4) Film  Crystal Orientation  Strain  Phonon Strain-shift Coefficient  Pulsed-laser Deposition  Thin-films  Spin-transport  Magnetite  Semiconductors  Spintronics  Scattering  Corrosion  Devices  Growth   First principles study of the electronic properties of twinned SiC nanowires 期刊论文  OAI收割 journal of nanoparticle research, JOURNAL OF NANOPARTICLE RESEARCH, 2011, 2011, 卷号: 13, 13, 期号: 1, 页码: 185-191, 185-191 作者:  Wang ZG;  Wang SJ;  Zhang CL;  Li JB;  Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：100/6  |  提交时间：2011/07/05 Twinned SiC nanowires  Electronic properties  Ab initio  Modeling and simulation  SILICON-CARBIDE NANOWIRES  FIELD-EMISSION PROPERTIES  MOLECULAR-BEAM EPITAXY  INAS NANOWIRES  GROWTH  NANOTUBES  NITRIDE  DIFFUSION  NANORODS  ENERGY  Twinned Sic Nanowires  Electronic Properties  Ab Initio  Modeling And Simulation  Silicon-carbide Nanowires  Field-emission Properties  Molecular-beam Epitaxy  Inas Nanowires  Growth  Nanotubes  Nitride  Diffusion  Nanorods  Energy   Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文  OAI收割 physica status solidi a-applications and materials science, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 2011, 卷号: 208, 208, 期号: 4, 页码: 843-850, 843-850 作者:  Zhu BL;  Zhu SJ;  Zhao XZ;  Su FH;  Li GH   |  收藏  |  浏览/下载：95/5  |  提交时间：2011/07/05 conductivity  doping  photoluminescence  pulsed laser deposition  ZnO  ZINC-OXIDE  ELECTRICAL-PROPERTIES  OPTICAL-PROPERTIES  OXYGEN-PRESSURE  PHOTOLUMINESCENCE  LUMINESCENCE  VIOLET  GROWTH  FABRICATION  DEPENDENCE  Conductivity  Doping  Photoluminescence  Pulsed Laser Deposition  Zno  Zinc-oxide  Electrical-properties  Optical-properties  Oxygen-pressure  Photoluminescence  Luminescence  Violet  Growth  Fabrication  Dependence