中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共11条,第1-10条 帮助

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The transformation of the lithospheric mantle beneath South China Block (SCB): constraints from petrological and geochemical studies of Daoxian and Ningyuan basalts and their melt inclusions 期刊论文  OAI收割
INTERNATIONAL GEOLOGY REVIEW, 2019, 页码: 24
作者:  
Duan, Xianzhe;  Zhang, Hongfu;  Santosh, M.;  Tian, Hengci;  Sun, He
  |  收藏  |  浏览/下载:69/0  |  提交时间:2019/07/29
Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts 期刊论文  OAI收割
IEEE Transactions on Electron Devices, 2018
作者:  
Ye TC(叶甜春);  Mao SJ(毛淑娟);  Wang GL(王桂磊);  Xu J(许静);  Luo X(罗雪)
  |  收藏  |  浏览/下载:35/0  |  提交时间:2019/05/05
Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate 期刊论文  OAI收割
Japanese Journal of Applied Physics, 2018
作者:  
Zhang D(张丹);  Wang WW(王文武);  Chen DP(陈大鹏);  Li JF(李俊峰);  Liu S(刘实)
  |  收藏  |  浏览/下载:21/0  |  提交时间:2019/05/20
Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n-and p-Ge substrate 期刊论文  OAI收割
Japanese Journal of Applied Physics, 2018
作者:  
Liu S(刘实);  Li JF(李俊峰);  Wang WW(王文武);  Chen DP(陈大鹏);  Zhao C(赵超)
  |  收藏  |  浏览/下载:10/0  |  提交时间:2019/05/20
面向先进CMOS技术节点的NiSi和NiGe接触技术研究 学位论文  OAI收割
: 中国科学院大学, 2018
作者:  
段宁远
  |  收藏  |  浏览/下载:13/0  |  提交时间:2018/09/05
On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes 期刊论文  OAI收割
ECS Journal of Solid State Science and Technology, 2017
作者:  
Wang GL(王桂磊);  Li JF(李俊峰);  Zhao C(赵超);  Ye TC(叶甜春);  Chen DP(陈大鹏)
  |  收藏  |  浏览/下载:39/0  |  提交时间:2018/06/08
用于FET的PECVD SiNx掺杂MoS2的有效性与可控性 期刊论文  OAI收割
微纳电子技术, 2017
作者:  
罗军;  贾昆鹏;  粟雅娟;  战俊;  段宁远
  |  收藏  |  浏览/下载:10/0  |  提交时间:2018/07/09
Reduction of NiGe/n-and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation 期刊论文  OAI收割
IEEE Transactions on Electron Devices, 2016
作者:  
Duan NY(段宁远);  Wang GL(王桂磊);  Liu JB(刘金彪);  Eddy simoen;  Mao SJ(毛淑娟)
  |  收藏  |  浏览/下载:15/0  |  提交时间:2017/05/09
Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology 期刊论文  OAI收割
Microelectronics Engineering, 2016
作者:  
Wang GL(王桂磊);  Qin ZL(秦长亮);  Yin HX(殷华湘);  Duan NY(段宁远);  Yang T(杨涛)
  |  收藏  |  浏览/下载:9/0  |  提交时间:2017/05/09
On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping 期刊论文  OAI收割
ECS Transactions, 2016
作者:  
Luo J(罗军);  Liu JB(刘金彪);  Eddy Simoen;  Wang GL(王桂磊);  Mao SJ(毛淑娟)
  |  收藏  |  浏览/下载:26/0  |  提交时间:2017/05/09