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CAS IR Grid
机构
上海光学精密机械研究... [8]
长春光学精密机械与物... [7]
西安光学精密机械研究... [3]
物理研究所 [2]
光电技术研究所 [1]
采集方式
OAI收割 [21]
内容类型
期刊论文 [13]
会议论文 [6]
学位论文 [2]
发表日期
2020 [1]
2019 [3]
2016 [1]
2012 [1]
2008 [4]
2007 [4]
更多
学科主题
光学工程 [2]
激光器;固体激光器 [2]
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浏览/检索结果:
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Reduction of beam divergence angle in laser-diode arrays with large smiles using a dual-beam transformation system
期刊论文
OAI收割
OPTICS COMMUNICATIONS, 2020, 卷号: 462
作者:
Liu, Bin
;
Liu, Hui
;
Chen, Fenning
;
Li, Haiyan
;
Gao, Lei
  |  
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2020/04/13
Diode laser array
Smile correction
Beam shaping
Optical system design
High-power low-smile vertically-stacked laser diode based on microchannel cooling
会议论文
OAI收割
Hangzhou, China, 2019-10-21
作者:
Zhang, Hongyou
;
Cai, Lei
;
Zah, Chung-En
;
Liu, Xingsheng
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2020/03/04
Thermal stress
laser diode array
SMILE effect
spectrum
High power diode laser source with a transmission grating for two spectral beam combining
期刊论文
OAI收割
Optik, 2019, 卷号: 192, 页码: 4
作者:
J.Y.Tian
;
J.Zhang
;
H.Y.Peng
;
Y.X.Lei
;
L.Qin
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2020/08/24
Diode laser,Spectral beam combining,Transmission grating,High beam,quality,array,Optics
Efficiency and Threshold Characteristics of Spectrally Beam Combined High-Power Diode Lasers
期刊论文
OAI收割
Ieee Journal of Quantum Electronics, 2019, 卷号: 55, 期号: 1, 页码: 7
作者:
F.Y.Sun
;
S.L.Shu
;
G.Y.Hou
;
L.J.Wang
;
J.Zhang
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2020/08/24
Efficiency,laser diode array,threshold,spectral beam combining,external-cavity,Engineering,Physics,Optics
High-power, high-efficiency 808 nm laser diode array
期刊论文
OAI收割
acta physica sinica, 2016, 卷号: 65, 期号: 16
作者:
Wang Zhen-Fu
;
Yang Guo-Wen
;
Wu Jian-Yao
;
Song Ke-Chang
;
Li Xiu-Shan
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2016/10/14
laser diode array
power conversion efficiency
absorption loss
asymmetric broad waveguide
KW-output high beam quality diode laser array source (EI CONFERENCE)
会议论文
OAI收割
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China
作者:
Zhang J.
;
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/03/25
With the advantages of small volume
light weight
high efficiency and long lifespan
diode laser has been widely applied to industrial processing. Presently
for laser used as processing light source needs to amount to dozens of KW per cm2 of power density
how to increase power output and get smaller light spot for diode laser becomes a key problem. It is introduced that by designing beam shaping by ourselves and making use of optical system for beam blooming and focusing
808nm laser array composed of 20 bars eventually achieves the 1001.5w power output
coupling efficiency at 90%
11mm2 of light spot through experiments
which enables diode laser to be directly applied to cladding
welding and so on. 2012 IEEE.
Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:
Qin L.
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2013/03/25
Firstly
the vertical external-cavity surface-emiting lasers (VECSELs) device structure and model was given
and the output characteristic was simple calculated. Then
in experiment
the VECSELs were grown
bonded on to the heat sink
and optically pumped by high-power 808nm diode laser array with fiber output module
the light emission spectra were measured. Finally
The thermal characteristic of the VECSELs was investigated by changing the temperature of the substrate. 2008 SPIE.
High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:
Wang X.
;
Wang L.
;
Wang L.
;
Wang L.
;
Wang Y.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/03/25
High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle
the average driving power in the laser chip is quite low
so the heating effect cemiconductor laser is very small
using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.
侧面抽运国产Nd∶YAG陶瓷棒的激光特性
期刊论文
OAI收割
中国激光, 2008, 卷号: 35, 期号: 12, 页码: 2001, 2004
唐昊
;
朱小磊
;
姜本学
;
潘裕柏
收藏
  |  
浏览/下载:1375/223
  |  
提交时间:2009/09/18
激光器
Atomic percents
Nd:YAG陶瓷
Average powers
激光二极管阵列
Beam divergence angles
侧面抽运
Laser diode array
被动调Q
Nd:YAG ceramic
Nd:yag ceramic lasers
Output couplers
Output performances
Passively Q-switched
Pulse widths
Side pump
Slope efficiencies
Transmission ratios
Wave outputs
Working frequencies
Yag crystals
Beam collimation of high-power laser diode array with graded-index fiber lens array
期刊论文
OAI收割
opt. eng., 2008, 卷号: 47, 期号: 5, 页码: 54202
Tang Yu-Long
;
Niu Jin-Fu
;
Yang Yong
;
徐剑秋
收藏
  |  
浏览/下载:995/194
  |  
提交时间:2009/09/18
beam collimation
laser diode array
graded-index fiber lens
fiber coupled