中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of defects in sputtered W/B4C multilayers

文献类型:期刊论文

作者Jiang, H; Yan, S; Zhu, JT; Dong, ZH; Zheng, Y; He, YM; Li, AG
刊名APPLIED SURFACE SCIENCE
出版日期2015
卷号357页码:1180—1186
关键词ATOMIC-FORCE MICROSCOPY OPTICAL APPLICATIONS DIFFUSE-SCATTERING TUNGSTEN-OXIDE THIN-FILMS COATINGS REFLECTIVITY INTERFACE CRACKING STRESS
ISSN号0169-4332
通讯作者Jiang, H (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Zhangheng Rd 239, Shanghai 201204, Peoples R China.
英文摘要Sputtered W/B4C multilayers were determined by X-ray photoelectron spectroscopy, Raman scattering spectroscopy, scanning electron microscopy and atomic force microscopy synthetically. Two defect modes were observed in multilayers: buckle delamination and oxidation. This paper compares the chemical composition varies along multilayer depth and at different regions and tries to interpret the mechanism of defect evolution. The X-ray grazing incidence reflection profiles were compared to the theoretical value to estimate the influences from different defects. (C) 2015 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000366216900153
公开日期2016-03-08
源URL[http://ir.sinap.ac.cn/handle/331007/24971]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式
GB/T 7714
Jiang, H,Yan, S,Zhu, JT,et al. Investigation of defects in sputtered W/B4C multilayers[J]. APPLIED SURFACE SCIENCE,2015,357:1180—1186.
APA Jiang, H.,Yan, S.,Zhu, JT.,Dong, ZH.,Zheng, Y.,...&Li, AG.(2015).Investigation of defects in sputtered W/B4C multilayers.APPLIED SURFACE SCIENCE,357,1180—1186.
MLA Jiang, H,et al."Investigation of defects in sputtered W/B4C multilayers".APPLIED SURFACE SCIENCE 357(2015):1180—1186.

入库方式: OAI收割

来源:上海应用物理研究所

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