Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes
文献类型：期刊论文
| 作者 | Lingcong Le ; Degang Zhao ; Desheng Jiang ; Ping Chen ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Xiaojing Li ; Xiaoguang He ; Jianping Liu ; Shuming Zhang ; Hui Yang |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2015 |
| 卷号 | 33期号:1页码:011209 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26757]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Lingcong Le,Degang Zhao,Desheng Jiang,et al. Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2015,33(1):011209. |
| APA | Lingcong Le.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Zongshun Liu.,...&Hui Yang.(2015).Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,33(1),011209. |
| MLA | Lingcong Le,et al."Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 33.1(2015):011209. |
入库方式： OAI收割
来源：半导体研究所
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