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浏览/检索结果: 共65条，第1-10条 帮助

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Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer 期刊论文  OAI收割
OPTICAL MATERIALS EXPRESS, 2021, 卷号: 11, 期号: 6, 页码: 1780-1790
作者:  Hou, Yufei;   Zhao, Degang;   Liang, Feng;   Liu, Zongshun;   Yang, Jing;   Chen, Ping
  |  收藏  |  浏览/下载：6/0  |  提交时间：2022/05/18
Monotonic variation in carbon-related defects with Fermi level in different conductive types of GaN 期刊论文  OAI收割
AIP ADVANCES, 2021, 卷号: 11, 期号: 8, 页码: 85321
作者:  Zhang, Yuheng;   Liang, Feng;   Zhao, Degang;   Yang, Jing;   Chen, Ping;   Liu, Zongshun
  |  收藏  |  浏览/下载：9/0  |  提交时间：2022/05/09
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells 期刊论文  OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 874, 页码: 159851
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Chen, Ping;   Yang, Jing;   Liu, Zongshun
  |  收藏  |  浏览/下载：71/0  |  提交时间：2022/03/28
The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties 期刊论文  OAI收割
NANOSCALE RESEARCH LETTERS, 2021, 卷号: 16, 期号: 1, 页码: 161
作者:  Ben, Yuhao;   Liang, Feng;   Zhao, Degang;   Yang, Jing;   Liu, Zongshun;   Chen, Ping
  |  收藏  |  浏览/下载：9/0  |  提交时间：2022/03/24
Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition 期刊论文  OAI收割
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 10, 页码: 105010
作者:  Zhang, Yuheng;   Yang, Jing;   Zhao, Degang;   Liang, Feng;   Chen, Ping;   Liu, Zongshun
  |  收藏  |  浏览/下载：14/0  |  提交时间：2022/03/28
Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes 期刊论文  OAI收割
OPTICS EXPRESS, 2021, 卷号: 29, 期号: 21, 页码: 33992-34001
作者:  Hou, Yufei;   Zhao, Degang;   Chen, Ping;   Liang, Feng;   Liu, Zongshun;   Yang, Jing
  |  收藏  |  浏览/下载：49/0  |  提交时间：2022/03/28
Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer 期刊论文  OAI收割
MATERIALS TODAY COMMUNICATIONS, 2021, 卷号: 29, 页码: 102923
作者:  Peng, Liyuan;   Zhao, Degang;   Liang, Feng;   Wang, Wenjie;   Liu, Zongshun;   Chen, Ping;   Yang, Jing
  |  收藏  |  浏览/下载：14/0  |  提交时间：2022/03/23
Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment 期刊论文  OAI收割
RESULTS IN PHYSICS, 2021, 卷号: 31, 页码: 105057
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Liu, Zongshun;   Chen, Ping;   Yang, Jing
  |  收藏  |  浏览/下载：17/0  |  提交时间：2022/03/23
The influence of residual GaN on two-step-grown GaN on sapphire 期刊论文  OAI收割
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 期号: 135, 页码: 105903
作者:  Peng, Liyuan;   Liu, Shuangtao;   Yang, Jing;   Zhao, Degang;   Liang, Feng;   Chen, Ping;   Liu, Zongshun
  |  收藏  |  浏览/下载：8/0  |  提交时间：2022/03/24
The influence of temperature and TMGa flow rate on the quality of p-GaN 期刊论文  OAI收割
AIP ADVANCES, 2021, 卷号: 11, 期号: 3, 页码: 35109
作者:  Cao, Zikun;   Wang, Xiaowei;   Zhao, Degang;   Liang, Feng;   Liu, Zongshun
  |  收藏  |  浏览/下载：3/0  |  提交时间：2022/09/29