The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates
文献类型：期刊论文
| 作者 | Zhang SM ; Yang H(杨辉); Zhang SM
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2009-10 |
| 卷号 | 18期号:10页码:4413-4417 |
| 关键词 | INTERSUBBAND ABSORPTION MU-M ALGAN GAN INTERLAYERS MOVPE ALN |
| 通讯作者 | Zhang SM |
| 合作状况 | 其它 |
| 英文摘要 | High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural proper-ties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000270300600051 |
| 公开日期 | 2010-01-15 |
| 源URL | [http://58.210.77.100/handle/332007/130]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Zhang SM; Zhang SM |
| 推荐引用方式 GB/T 7714 | Zhang SM,Yang H,Zhang SM. The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates[J]. CHINESE PHYSICS B,2009,18(10):4413-4417. |
| APA | Zhang SM,Yang H,&Zhang SM.(2009).The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates.CHINESE PHYSICS B,18(10),4413-4417. |
| MLA | Zhang SM,et al."The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates".CHINESE PHYSICS B 18.10(2009):4413-4417. |
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