Switching memory: an optoelectronic resistive switching memory with integrated demodulating and arithmetic functions (adv. Mater. 17/2015).
文献类型：期刊论文
| 作者 | Tan, Hongwei ; Liu, Gang ; Zhu, Xiaojian ; Yang, Huali ; Chen, Bin ; Chen, Xinxin ; Shang, Jie ; Lu, Wei D ; Wu, Yihong ; Li, Run-Wei |
| 刊名 | Advanced materials (Deerfield Beach, Fla.)
 |
| 出版日期 | 2015 |
| 卷号 | 27期号:17页码:2812-2812 |
| 公开日期 | 2016-09-18 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/12451]  |
| 专题 | 宁波材料技术与工程研究所_2015专题 |
| 推荐引用方式 GB/T 7714 | Tan, Hongwei,Liu, Gang,Zhu, Xiaojian,et al. Switching memory: an optoelectronic resistive switching memory with integrated demodulating and arithmetic functions (adv. Mater. 17/2015).[J]. Advanced materials (Deerfield Beach, Fla.),2015,27(17):2812-2812. |
| APA | Tan, Hongwei.,Liu, Gang.,Zhu, Xiaojian.,Yang, Huali.,Chen, Bin.,...&Li, Run-Wei.(2015).Switching memory: an optoelectronic resistive switching memory with integrated demodulating and arithmetic functions (adv. Mater. 17/2015)..Advanced materials (Deerfield Beach, Fla.),27(17),2812-2812. |
| MLA | Tan, Hongwei,et al."Switching memory: an optoelectronic resistive switching memory with integrated demodulating and arithmetic functions (adv. Mater. 17/2015).".Advanced materials (Deerfield Beach, Fla.) 27.17(2015):2812-2812. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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