Surface modification of multilayer graphene using Ga ion irradiation
文献类型：期刊论文
| 作者 | Wang Q(王权); Shao, Ying; Ge DH(葛道晗); Yang QZ(杨启志); Ren NF(任乃飞) |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2015 |
| 卷号 | 117期号:16页码:1-7 |
| ISSN号 | 0021-8979 |
| 产权排序 | 3 |
| 通讯作者 | 王权 |
| 中文摘要 | The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene. |
| 关键词[WOS] | FEW-LAYER GRAPHENE ; RAMAN-SPECTROSCOPY ; SINGLE-LAYER ; DEFECTS ; CARBON ; FILMS |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000353831100066 |
| 源URL | [http://ir.sia.cn/handle/173321/18738]  |
| 专题 | 沈阳自动化研究所_机器人学研究室 |
| 推荐引用方式 GB/T 7714 | Wang Q,Shao, Ying,Ge DH,et al. Surface modification of multilayer graphene using Ga ion irradiation[J]. JOURNAL OF APPLIED PHYSICS,2015,117(16):1-7. |
| APA | Wang Q,Shao, Ying,Ge DH,Yang QZ,&Ren NF.(2015).Surface modification of multilayer graphene using Ga ion irradiation.JOURNAL OF APPLIED PHYSICS,117(16),1-7. |
| MLA | Wang Q,et al."Surface modification of multilayer graphene using Ga ion irradiation".JOURNAL OF APPLIED PHYSICS 117.16(2015):1-7. |
入库方式： OAI收割
来源：沈阳自动化研究所
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