Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors
文献类型:期刊论文
作者 | Xiaojing Li ; Degang Zhao ; Desheng Jiang ; Ping Chen ; Jianjun Zhu ; Zongshun Liu ; Lingcong Le ; Jing Yang ; Xiaoguang He ; Liqun Zhang ; Shuming Zhang ; Jianping Liu ; Hui Yang |
刊名 | journal of vacuum science & technology b |
出版日期 | 2016 |
卷号 | 34期号:1页码:011204 |
学科主题 | 光电子学 |
收录类别 | SCI |
公开日期 | 2017-03-10 |
源URL | [http://ir.semi.ac.cn/handle/172111/27867] |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Xiaojing Li,Degang Zhao,Desheng Jiang,et al. Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors[J]. journal of vacuum science & technology b,2016,34(1):011204. |
APA | Xiaojing Li.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Jianjun Zhu.,...&Hui Yang.(2016).Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors.journal of vacuum science & technology b,34(1),011204. |
MLA | Xiaojing Li,et al."Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors".journal of vacuum science & technology b 34.1(2016):011204. |
入库方式: OAI收割
来源:半导体研究所
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