中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors

文献类型:期刊论文

作者Xiaojing Li ; Degang Zhao ; Desheng Jiang ; Ping Chen ; Jianjun Zhu ; Zongshun Liu ; Lingcong Le ; Jing Yang ; Xiaoguang He ; Liqun Zhang ; Shuming Zhang ; Jianping Liu ; Hui Yang
刊名journal of vacuum science & technology b
出版日期2016
卷号34期号:1页码:011204
学科主题光电子学
收录类别SCI
公开日期2017-03-10
源URL[http://ir.semi.ac.cn/handle/172111/27867]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Xiaojing Li,Degang Zhao,Desheng Jiang,et al. Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors[J]. journal of vacuum science & technology b,2016,34(1):011204.
APA Xiaojing Li.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Jianjun Zhu.,...&Hui Yang.(2016).Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors.journal of vacuum science & technology b,34(1),011204.
MLA Xiaojing Li,et al."Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors".journal of vacuum science & technology b 34.1(2016):011204.

入库方式: OAI收割

来源:半导体研究所

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