Annealing Effect on the Physical Properties of La0.7Sr0.3MnO3 Thin Films Grown on Si Substrates Prepared by Chemical Solution Deposition Method
文献类型:期刊论文
作者 | Cao, Danyan1; Zhang, Yuanyuan1; Yang, Jing1; Bai, Wei1; Chen, Ying2; Wang, Genshui2; Dong, Xianlin2; Tang, Xiaodong1 |
刊名 | FERROELECTRICS
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出版日期 | 2016-01-26 |
卷号 | 491期号:1页码:143-148 |
关键词 | Manganite magnetoresistance doping La0.7Sr0.3MnO3 |
英文摘要 | The LSMO films were prepared on Si substrates by chemical solution deposition method. The films were annealing in air and O-2 atmosphere. All films have perfectly crystallized. Compared with the LSMO films annealing in air, the residual and saturation magnetic moment value were much lower for the films annealing in O-2. The T-c of the LSMO films annealing in O-2 is higher about 15 K than that annealing in air. The variation of magnetization and Tc with annealing in O-2 is thus consistent with the change of Sr content and is almost certainly related to the Mn3+/Mn4+ ratio. The MR value is decreased with the increasing temperature. It is observed that the transport properties, both the resistivity and the magnetoresistance value, have similar variation behavior. It is because that the La(Sr) vacancies (delta > 0) are expected to have indirect perturb the conduction path. The resistivity and the MR value at 7 T of the both films are 0.145 Omega.cm, 59.3%), 0.208 Omega.cm, 60.0%), respectively. |
WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
类目[WOS] | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
研究领域[WOS] | Materials Science ; Physics |
关键词[WOS] | TRANSPORT |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000370006200018 |
源URL | [http://ir.sic.ac.cn/handle/331005/23198] ![]() |
专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
作者单位 | 1.E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 1295 Dingxi Rd, Shanghai 200050, Peoples R China |
推荐引用方式 GB/T 7714 | Cao, Danyan,Zhang, Yuanyuan,Yang, Jing,et al. Annealing Effect on the Physical Properties of La0.7Sr0.3MnO3 Thin Films Grown on Si Substrates Prepared by Chemical Solution Deposition Method[J]. FERROELECTRICS,2016,491(1):143-148. |
APA | Cao, Danyan.,Zhang, Yuanyuan.,Yang, Jing.,Bai, Wei.,Chen, Ying.,...&Tang, Xiaodong.(2016).Annealing Effect on the Physical Properties of La0.7Sr0.3MnO3 Thin Films Grown on Si Substrates Prepared by Chemical Solution Deposition Method.FERROELECTRICS,491(1),143-148. |
MLA | Cao, Danyan,et al."Annealing Effect on the Physical Properties of La0.7Sr0.3MnO3 Thin Films Grown on Si Substrates Prepared by Chemical Solution Deposition Method".FERROELECTRICS 491.1(2016):143-148. |
入库方式: OAI收割
来源:上海硅酸盐研究所
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