A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region
文献类型：期刊论文
| 作者 | Zhengxin Wen; Feng Zhang; Member; IEEE; Zhanwei Shen; Lixin Tian; Guoguo Yan; Xingfang Liu; Lei Wang; Wanshun Zhao |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2017 |
| 卷号 | 38期号:7页码:941-944 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2018-06-01 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28522]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhengxin Wen,Feng Zhang,Member,et al. A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region[J]. IEEE ELECTRON DEVICE LETTERS,2017,38(7):941-944. |
| APA | Zhengxin Wen.,Feng Zhang.,Member.,IEEE.,Zhanwei Shen.,...&Yiping Zeng.(2017).A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region.IEEE ELECTRON DEVICE LETTERS,38(7),941-944. |
| MLA | Zhengxin Wen,et al."A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region".IEEE ELECTRON DEVICE LETTERS 38.7(2017):941-944. |
入库方式： OAI收割
来源：半导体研究所
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