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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共4条，第1-4条 帮助

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High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET 期刊论文  OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 10, 页码: 4046-4053
作者:  Zhanwei Shen;   Feng Zhang ;   Member;   IEEE;   Guoguo Yan;   Zhengxin Wen;   Wanshun Zhao;   Lei Wang;   Xingfang Liu;   Guosheng Sun;   Yiping Zeng
  |  收藏  |  浏览/下载：24/0  |  提交时间：2021/05/24
The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition 期刊论文  OAI收割
Materials Science in Semiconductor Processing, 2019, 卷号: 94, 页码: 107-115
作者:  Jun Chen ;   Bowen Lv ;   Feng Zhang ;   Yinshu Wang ;   Xingfang Liu ;   Guoguo Yan ;   Zhanwei Shen ;   Zhengxin Wen ;   Lei Wang ;   Wanshun Zhao ;   Guosheng Sun ;   Chao Liu ;   Yiping Zeng
  |  收藏  |  浏览/下载：21/0  |  提交时间：2020/07/31
Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文  OAI收割
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
作者:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
  |  收藏  |  浏览/下载：18/0  |  提交时间：2019/11/15
A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文  OAI收割
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944
作者:  Zhengxin Wen;  Feng Zhang;  Member;  IEEE;  Zhanwei Shen
收藏  |  浏览/下载：36/0  |  提交时间：2018/06/01