Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells
文献类型:期刊论文
作者 | Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiang Li; Feng Liang |
刊名 | IEEE JOURNAL OF PHOTOVOLTAICS |
出版日期 | 2017 |
卷号 | 7期号:4页码:1017-1023 |
学科主题 | 光电子学 |
公开日期 | 2018-07-11 |
源URL | [http://ir.semi.ac.cn/handle/172111/28769] |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Wei Liu,Degang Zhao,Desheng Jiang,et al. Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells[J]. IEEE JOURNAL OF PHOTOVOLTAICS,2017,7(4):1017-1023. |
APA | Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Dongping Shi.,...&Mo Li.(2017).Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells.IEEE JOURNAL OF PHOTOVOLTAICS,7(4),1017-1023. |
MLA | Wei Liu,et al."Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells".IEEE JOURNAL OF PHOTOVOLTAICS 7.4(2017):1017-1023. |
入库方式: OAI收割
来源:半导体研究所
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