中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells

文献类型:期刊论文

作者Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiang Li; Feng Liang
刊名IEEE JOURNAL OF PHOTOVOLTAICS
出版日期2017
卷号7期号:4页码:1017-1023
学科主题光电子学
公开日期2018-07-11
源URL[http://ir.semi.ac.cn/handle/172111/28769]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Wei Liu,Degang Zhao,Desheng Jiang,et al. Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells[J]. IEEE JOURNAL OF PHOTOVOLTAICS,2017,7(4):1017-1023.
APA Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Dongping Shi.,...&Mo Li.(2017).Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells.IEEE JOURNAL OF PHOTOVOLTAICS,7(4),1017-1023.
MLA Wei Liu,et al."Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells".IEEE JOURNAL OF PHOTOVOLTAICS 7.4(2017):1017-1023.

入库方式: OAI收割

来源:半导体研究所

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