Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Pan X ; Hou QF
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:4页码:article no.48102 |
| 关键词 | ELECTRON-MOBILITY TRANSISTORS AL-CONTENT STRESS-CONTROL PHASE EPITAXY ALGAN BUFFER LAYERS HETEROSTRUCTURES INTERLAYERS SILICON |
| ISSN号 | 0256-307x |
| 通讯作者 | wei, m, chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china. mengw@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | chinese academy of sciences [yyyj-0701-02, is-cas2008t01, iscas2009l01, iscas2009l02]; national natural science foundation of china [60890193, 60906006]; national basic research program of china [2006cb604905, 2010cb327503] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | a 2 mu m high quality crack-free gan film was successfully grown on 2-inch si(111) substrates by metal organic chemical vapor deposition with a high temperature aln/graded-algan multibuffer and an aln/gan superlattice interlayer. it is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free gan epilayer. the gan(0002) xrd fwhm of the crack-free sample is 479.8 arcsec, indicating good crystal quality. an algan/gan heterostructure was grown and tested by van der pauw hall measurement. the electron mobility of two-dimensional electron gas increases from 1928 cm(2)/v.s to 12277 cm(2)/v.s when the test-temperature decreases from room temperature to liquid nitrogen temperature. the electron mobility is comparable to that of algan/gan heterostructures grown on sapphire, and the largest value is obtained for an algan/gan/si(111) heterostructure grown by metal organic chemical vapor deposition. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20815]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Pan X,Hou QF. Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. chinese physics letters,2011,28(4):article no.48102. |
| APA | Pan X,&Hou QF.(2011).Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition.chinese physics letters,28(4),article no.48102. |
| MLA | Pan X,et al."Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition".chinese physics letters 28.4(2011):article no.48102. |
入库方式： OAI收割
来源：半导体研究所
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