中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Maskless inverted pyramid texturization of silicon

文献类型:期刊论文

作者Wang, Yan1; Yang, Lixia1; Liu, Yaoping1; Mei, Zengxia1; Chen, Wei1; Li, Junqiang1; Liang, Huili1; Kuznetsov, Andrej2; Du Xiaolong1
刊名Scientific reports
出版日期2015-06-02
卷号5页码:6
ISSN号2045-2322
DOI10.1038/srep10843
通讯作者Liu, yaoping(ypliu@iphy.ac.cn)
英文摘要We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. the so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of their superior light-trapping and structure characteristics, can currently only be achieved using more complex techniques involving lithography, laser processing, etc. importantly, our data demonstrate a feasibility of inverted pyramidal texturization of silicon by maskless cu-nanoparticles assisted etching in cu(no3)(2) / hf / h2o2 / h2o solutions and as such may have significant impacts on communities of fellow researchers and industrialists.
WOS关键词SOLAR-CELL APPLICATIONS ; CRYSTALLINE SILICON ; BLACK-SILICON ; NANOWIRES ; SURFACE ; SI ; PASSIVATION ; TMAH
WOS研究方向Science & Technology - Other Topics
WOS类目Multidisciplinary Sciences
语种英语
WOS记录号WOS:000355614500001
出版者NATURE PUBLISHING GROUP
URI标识http://www.irgrid.ac.cn/handle/1471x/2373576
专题物理研究所
通讯作者Liu, Yaoping
作者单位1.Chinese Acad Sci, Inst Phys, Beijing Key Lab New Energy Mat & Devices, Natl Lab Condensed Matter Phys,Key Lab Renewable, Beijing 100190, Peoples R China
2.Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, NO-0316 Oslo, Norway
推荐引用方式
GB/T 7714
Wang, Yan,Yang, Lixia,Liu, Yaoping,et al. Maskless inverted pyramid texturization of silicon[J]. Scientific reports,2015,5:6.
APA Wang, Yan.,Yang, Lixia.,Liu, Yaoping.,Mei, Zengxia.,Chen, Wei.,...&Du Xiaolong.(2015).Maskless inverted pyramid texturization of silicon.Scientific reports,5,6.
MLA Wang, Yan,et al."Maskless inverted pyramid texturization of silicon".Scientific reports 5(2015):6.

入库方式: iSwitch采集

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。