Synthesis of boron nitride nanotubes by means of excimer laser ablation at high temperature
文献类型：期刊论文
| 作者 | Yu, DP; Sun, XS; Lee, CS; Bello, I; Lee, ST; Gu, HD; Leung, KM; Zhou, GW; Dong, ZF; Zhang, Z |
| 刊名 | Applied physics letters
 |
| 出版日期 | 1998-04-20 |
| 卷号 | 72期号:16页码:1966-1968 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Lee, cs() |
| 英文摘要 | Boron nitride nanotubes (bn-nts) were synthesized by using excimer laser ablation at 1200 degrees c in different carrier gases. the main characteristic of the bn-nts produced by this method is that nanotubes are of only one to three atomic layers thick, which could be attributed to the dominance of the axial growth rate over the radial growth rate, the diameter of the bn-nts ranged from 1.5 to 8 nm. the tips of the bn-nts are either a flat cap or of polygonal termination, in contrast to the conical ends of carbon nanotubes. the atomic ratio of boron to nitrogen as measured by means of parallel electron energy loss spectroscopy is 0.8, which is within the experimental error of the stoichiometry of hexagonal bn structure. (c) 1998 american institute of physics. |
| WOS关键词 | CARBON NANOTUBES ; GROWTH |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000073226300010 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373807 |
| 专题 | 物理研究所 |
| 通讯作者 | Lee, CS |
| 作者单位 | 1.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong 2.Acad Sinica, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yu, DP,Sun, XS,Lee, CS,et al. Synthesis of boron nitride nanotubes by means of excimer laser ablation at high temperature[J]. Applied physics letters,1998,72(16):1966-1968. |
| APA | Yu, DP.,Sun, XS.,Lee, CS.,Bello, I.,Lee, ST.,...&Zhang, Z.(1998).Synthesis of boron nitride nanotubes by means of excimer laser ablation at high temperature.Applied physics letters,72(16),1966-1968. |
| MLA | Yu, DP,et al."Synthesis of boron nitride nanotubes by means of excimer laser ablation at high temperature".Applied physics letters 72.16(1998):1966-1968. |
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