中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Dynamic study and experimental "two-step process" of substrate step preparation for high-t-c josephson junctions

文献类型:期刊论文

作者Zhai, HY; Zhang, L; Chu, WK; Morishita, T; Tanaka, S; Xu, FZ; Yang, QS
刊名Applied physics letters
出版日期2000-03-06
卷号76期号:10页码:1312-1314
ISSN号0003-6951
通讯作者Zhai, hy()
英文摘要We report theoretical and experimental studies of the dynamics of substrate step preparation for high-t-c josephson junctions. a maximum step edge angle of 70.8 degrees has been calculated for srtio3 (sto) substrates with a nb mask. this calculated angle agrees well with our experimental result of 66 degrees. step-edge angles can be predicted for different purposes using this method. we also utilized a "two-step process" to improve the surface morphology of the stepped substrate, and step-edge josephson junctions were fabricated with good uniformity. (c) 2000 american institute of physics. [s0003-6951(00)04010-9].
WOS关键词EDGE JUNCTIONS ; DC SQUIDS ; MICROSTRUCTURE ; FILMS ; ION
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000085560800032
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2373897
专题物理研究所
通讯作者Zhai, HY
作者单位1.Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
2.Int Superconduct Technol Ctr, Superconduct Res Lab, Koto Ku, Tokyo 135, Japan
3.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Zhai, HY,Zhang, L,Chu, WK,et al. Dynamic study and experimental "two-step process" of substrate step preparation for high-t-c josephson junctions[J]. Applied physics letters,2000,76(10):1312-1314.
APA Zhai, HY.,Zhang, L.,Chu, WK.,Morishita, T.,Tanaka, S.,...&Yang, QS.(2000).Dynamic study and experimental "two-step process" of substrate step preparation for high-t-c josephson junctions.Applied physics letters,76(10),1312-1314.
MLA Zhai, HY,et al."Dynamic study and experimental "two-step process" of substrate step preparation for high-t-c josephson junctions".Applied physics letters 76.10(2000):1312-1314.

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