Dynamic study and experimental "two-step process" of substrate step preparation for high-t-c josephson junctions
文献类型:期刊论文
作者 | Zhai, HY; Zhang, L; Chu, WK; Morishita, T; Tanaka, S; Xu, FZ; Yang, QS |
刊名 | Applied physics letters
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出版日期 | 2000-03-06 |
卷号 | 76期号:10页码:1312-1314 |
ISSN号 | 0003-6951 |
通讯作者 | Zhai, hy() |
英文摘要 | We report theoretical and experimental studies of the dynamics of substrate step preparation for high-t-c josephson junctions. a maximum step edge angle of 70.8 degrees has been calculated for srtio3 (sto) substrates with a nb mask. this calculated angle agrees well with our experimental result of 66 degrees. step-edge angles can be predicted for different purposes using this method. we also utilized a "two-step process" to improve the surface morphology of the stepped substrate, and step-edge josephson junctions were fabricated with good uniformity. (c) 2000 american institute of physics. [s0003-6951(00)04010-9]. |
WOS关键词 | EDGE JUNCTIONS ; DC SQUIDS ; MICROSTRUCTURE ; FILMS ; ION |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000085560800032 |
出版者 | AMER INST PHYSICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373897 |
专题 | 物理研究所 |
通讯作者 | Zhai, HY |
作者单位 | 1.Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA 2.Int Superconduct Technol Ctr, Superconduct Res Lab, Koto Ku, Tokyo 135, Japan 3.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Zhai, HY,Zhang, L,Chu, WK,et al. Dynamic study and experimental "two-step process" of substrate step preparation for high-t-c josephson junctions[J]. Applied physics letters,2000,76(10):1312-1314. |
APA | Zhai, HY.,Zhang, L.,Chu, WK.,Morishita, T.,Tanaka, S.,...&Yang, QS.(2000).Dynamic study and experimental "two-step process" of substrate step preparation for high-t-c josephson junctions.Applied physics letters,76(10),1312-1314. |
MLA | Zhai, HY,et al."Dynamic study and experimental "two-step process" of substrate step preparation for high-t-c josephson junctions".Applied physics letters 76.10(2000):1312-1314. |
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来源:物理研究所
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