Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer
文献类型：期刊论文
| 作者 | Dai, Lihua1,2; Bi, Dawei1; Ning, Bingxu1; Hu, Zhiyuan1; Song, Lei1,2; Liu, Xiaonian1,2; Zhang, Mengying1,2; Zhang, Zhengxuan1; Zou, Shichang1 |
| 刊名 | Ieee transactions on nuclear science
 |
| 出版日期 | 2016-10-01 |
| 卷号 | 63期号:5页码:2731-2737 |
| 关键词 | Buried oxide Interface trap Silicon ion implantation Soi nmosfets Total dose radiation |
| ISSN号 | 0018-9499 |
| DOI | 10.1109/tns.2016.2604342 |
| 通讯作者 | Dai, lihua(davidb@mail.sim.ac.cn) |
| 英文摘要 | We have investigated the direct-current characteristics of the 130-nm partially depleted soi nmosfets fabricated on modified wafer with silicon ion implantation and control wafer before and after total dose radiation. due to the deep electron traps in buried oxide, the back gate threshold voltage of the modified soi device increases when hot electrons are injected into the buried oxide. moreover, due to this electrons injection process, the top-si/buried-oxide interface produces donor-like electron traps, which results in a kink effect in i-v characteristic curve and double gm peak behavior in back gate transistor. by tcad simulation, we have demonstrated that the deformation of the i-v curve depends on the density of the interface trap on the premise of double gm peak generation. it was speculated that hot electrons injection could produce si-o weak bond and weak interaction with the peculiar bonding parameter at the top-si/box interface. finally, the radiation results show that silicon ion implantation can effectively enhance the radiation hardness performance of the soi material. |
| WOS关键词 | BURIED OXIDES ; THERMAL OXIDES ; SIMOX ; HOLE ; MOSFETS ; IMPLANTATION ; GENERATION ; BESOI |
| WOS研究方向 | Engineering ; Nuclear Science & Technology |
| WOS类目 | Engineering, Electrical & Electronic ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:000386228400018 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2375002 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Dai, Lihua |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dai, Lihua,Bi, Dawei,Ning, Bingxu,et al. Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer[J]. Ieee transactions on nuclear science,2016,63(5):2731-2737. |
| APA | Dai, Lihua.,Bi, Dawei.,Ning, Bingxu.,Hu, Zhiyuan.,Song, Lei.,...&Zou, Shichang.(2016).Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer.Ieee transactions on nuclear science,63(5),2731-2737. |
| MLA | Dai, Lihua,et al."Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer".Ieee transactions on nuclear science 63.5(2016):2731-2737. |
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来源：中国科学院大学
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