中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer

文献类型:期刊论文

作者Dai, Lihua1,2; Bi, Dawei1; Ning, Bingxu1; Hu, Zhiyuan1; Song, Lei1,2; Liu, Xiaonian1,2; Zhang, Mengying1,2; Zhang, Zhengxuan1; Zou, Shichang1
刊名Ieee transactions on nuclear science
出版日期2016-10-01
卷号63期号:5页码:2731-2737
关键词Buried oxide Interface trap Silicon ion implantation Soi nmosfets Total dose radiation
ISSN号0018-9499
DOI10.1109/tns.2016.2604342
通讯作者Dai, lihua(davidb@mail.sim.ac.cn)
英文摘要We have investigated the direct-current characteristics of the 130-nm partially depleted soi nmosfets fabricated on modified wafer with silicon ion implantation and control wafer before and after total dose radiation. due to the deep electron traps in buried oxide, the back gate threshold voltage of the modified soi device increases when hot electrons are injected into the buried oxide. moreover, due to this electrons injection process, the top-si/buried-oxide interface produces donor-like electron traps, which results in a kink effect in i-v characteristic curve and double gm peak behavior in back gate transistor. by tcad simulation, we have demonstrated that the deformation of the i-v curve depends on the density of the interface trap on the premise of double gm peak generation. it was speculated that hot electrons injection could produce si-o weak bond and weak interaction with the peculiar bonding parameter at the top-si/box interface. finally, the radiation results show that silicon ion implantation can effectively enhance the radiation hardness performance of the soi material.
WOS关键词BURIED OXIDES ; THERMAL OXIDES ; SIMOX ; HOLE ; MOSFETS ; IMPLANTATION ; GENERATION ; BESOI
WOS研究方向Engineering ; Nuclear Science & Technology
WOS类目Engineering, Electrical & Electronic ; Nuclear Science & Technology
语种英语
WOS记录号WOS:000386228400018
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
URI标识http://www.irgrid.ac.cn/handle/1471x/2375002
专题中国科学院大学
通讯作者Dai, Lihua
作者单位1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Dai, Lihua,Bi, Dawei,Ning, Bingxu,et al. Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer[J]. Ieee transactions on nuclear science,2016,63(5):2731-2737.
APA Dai, Lihua.,Bi, Dawei.,Ning, Bingxu.,Hu, Zhiyuan.,Song, Lei.,...&Zou, Shichang.(2016).Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer.Ieee transactions on nuclear science,63(5),2731-2737.
MLA Dai, Lihua,et al."Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer".Ieee transactions on nuclear science 63.5(2016):2731-2737.

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来源:中国科学院大学

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