中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Mechanismand model of atomic hydrogen cleaning for different types of carbon contamination on extreme ultraviolet multilayers

文献类型:期刊论文

作者Song, Yuan1,2; Lu, Qipeng1; Gong, Xuepeng1
刊名Thin solid films
出版日期2016-08-01
卷号612页码:96-100
关键词Atomic hydrogen cleaning Different types of carbon contamination Extreme ultraviolet lithography Cleaning mechanism
ISSN号0040-6090
DOI10.1016/j.tsf.2016.06.002
通讯作者Lu, qipeng(luqipeng51@126.com)
英文摘要The use of atomic hydrogen to clean carbon contaminants on multilayers in extreme ultraviolet lithography systems has been extensively investigated. additional knowledge of the cleaning rate would not only provide a better understanding of the reaction mechanism but would also inform the industry's cleaning process. in this paper, which focuses on the atomic-hydrogen-based carbon contamination cleaning process, a possible mechanism for the associated reactions is studied and a cleaning model is established. the calculated results are in good agreement with the existing experimental data in the literature. the influences of the main factors such as activation energy and types of contamination - on the cleaning rate are addressed by the model. the model shows that the cleaning rate depends on the type of carbon contamination. the rate for a polymer-like carbon layer is higher than the rate for graphitic and diamond-like carbon layers. at 340 k, the rate for a polymer-like carbon layer is 10 times higher than for graphitic carbon layers. this model could be used effectively to predict and evaluate the cleaning rates for various carbon contamination types. (c) 2016 elsevier b.v. all rights reserved.
WOS关键词CHEMICAL EROSION ; TECHNOLOGY ; MIRROR ; GRAPHITE ; SURFACES
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000380511900016
出版者ELSEVIER SCIENCE SA
URI标识http://www.irgrid.ac.cn/handle/1471x/2375085
专题中国科学院大学
通讯作者Lu, Qipeng
作者单位1.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Appl Opt, Changchun 130033, Jilin, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Song, Yuan,Lu, Qipeng,Gong, Xuepeng. Mechanismand model of atomic hydrogen cleaning for different types of carbon contamination on extreme ultraviolet multilayers[J]. Thin solid films,2016,612:96-100.
APA Song, Yuan,Lu, Qipeng,&Gong, Xuepeng.(2016).Mechanismand model of atomic hydrogen cleaning for different types of carbon contamination on extreme ultraviolet multilayers.Thin solid films,612,96-100.
MLA Song, Yuan,et al."Mechanismand model of atomic hydrogen cleaning for different types of carbon contamination on extreme ultraviolet multilayers".Thin solid films 612(2016):96-100.

入库方式: iSwitch采集

来源:中国科学院大学

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。