Surface etching mechanism of carbon-doped ge2sb2te5 phase change material in fluorocarbon plasma
文献类型：期刊论文
| 作者 | Shen, Lanlan1,2; Song, Sannian1; Song, Zhitang1; Li, Le1; Guo, Tianqi1; Cheng, Yan1; Lv, Shilong1; Wu, Liangcai1; Liu, Bo1; Feng, Songlin1 |
| 刊名 | Applied physics a-materials science & processing
 |
| 出版日期 | 2016-09-01 |
| 卷号 | 122期号:9页码:6 |
| ISSN号 | 0947-8396 |
| DOI | 10.1007/s00339-016-0381-4 |
| 通讯作者 | Shen, lanlan(lanlanshen@mail.sim.ac.cn) |
| 英文摘要 | Recently, carbon-doped ge2sb2te5 (cgst) phase change material has been widely researched for being highly promising material for future phase change memory application. in this paper, the reactive-ion etching of cgst film in cf4/ar plasma is studied. compared with gst, the etch rate of cgst is relatively lower due to the existence of carbon which reduce the concentration of f or cfx reactive radicals. it was found that argon plays an important role in defining the sidewall edge acuity. compared with gst, more physical bombardment is required to obtain vertical sidewall of cgst. the effect of fluorocarbon gas on the damage of the etched cgst film was also investigated. a ge- and sb-deficient layer with tens of nanometers was observed by tem combining with xps analysis. the reaction between fluorocarbon plasma and cgst is mainly dominated by the diffusion and consumption of reactive fluorine radicals through the fluorocarbon layer into the cgst substrate material. the formation of damage layer is mainly caused by strong chemical reactivity, low volatility of reaction compounds and weak ion bombardment. |
| WOS关键词 | INDUCTIVELY-COUPLED PLASMA ; CHANGE MEMORY DEVICE ; GESBTE THIN-FILMS ; CHF3/O-2 PLASMA ; SILICON |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000382642700081 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376321 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Shen, Lanlan |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shen, Lanlan,Song, Sannian,Song, Zhitang,et al. Surface etching mechanism of carbon-doped ge2sb2te5 phase change material in fluorocarbon plasma[J]. Applied physics a-materials science & processing,2016,122(9):6. |
| APA | Shen, Lanlan.,Song, Sannian.,Song, Zhitang.,Li, Le.,Guo, Tianqi.,...&Feng, Songlin.(2016).Surface etching mechanism of carbon-doped ge2sb2te5 phase change material in fluorocarbon plasma.Applied physics a-materials science & processing,122(9),6. |
| MLA | Shen, Lanlan,et al."Surface etching mechanism of carbon-doped ge2sb2te5 phase change material in fluorocarbon plasma".Applied physics a-materials science & processing 122.9(2016):6. |
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来源：中国科学院大学
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