Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology
文献类型：期刊论文
| 作者 | Chen, Zhuojun1,2; Lin, Min1; Zheng, Yunlong1; Wei, Zuodong1; Huang, Shuigen1; Zou, Shichang1 |
| 刊名 | Ieee transactions on nuclear science
 |
| 出版日期 | 2016-08-01 |
| 卷号 | 63期号:4页码:2402-2408 |
| 关键词 | Heavy-ion testing Pd-soi Phase-locked loop Pulsed-laser testing Radiation hardening by design Single-event transients |
| ISSN号 | 0018-9499 |
| DOI | 10.1109/tns.2016.2590420 |
| 通讯作者 | Chen, zhuojun(zjchen@mail.sim.ac.cn) |
| 英文摘要 | In this paper, a radiation-tolerant phase-locked loop (pll) is designed and fabricated with 130 nm pd-soi technology. a current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (dcc) layout of the complementary switches. besides, the stacked soi transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. the experimental results show that the proposed pll has no significant jitter variations under heavy-ion experiments, compared with tmr-hardened pll. besides, pulsed-laser testing comprehensively characterizes the single-event transients of the pll and demonstrates its radiation tolerant performance. |
| WOS关键词 | SET SENSITIVITY ; DESIGN ; CMOS ; OSCILLATOR |
| WOS研究方向 | Engineering ; Nuclear Science & Technology |
| WOS类目 | Engineering, Electrical & Electronic ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:000382469200019 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376358 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Chen, Zhuojun |
| 作者单位 | 1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Zhuojun,Lin, Min,Zheng, Yunlong,et al. Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology[J]. Ieee transactions on nuclear science,2016,63(4):2402-2408. |
| APA | Chen, Zhuojun,Lin, Min,Zheng, Yunlong,Wei, Zuodong,Huang, Shuigen,&Zou, Shichang.(2016).Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology.Ieee transactions on nuclear science,63(4),2402-2408. |
| MLA | Chen, Zhuojun,et al."Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology".Ieee transactions on nuclear science 63.4(2016):2402-2408. |
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来源：中国科学院大学
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