Carbon nanotubes coated with alumina as gate dielectrics of field-effect transistors
文献类型：期刊论文
| 作者 | Fu, L; Liu, YQ; Liu, ZM; Han, BX; Cao, LC; Wei, DC; Yu, G; Zhu, DB |
| 刊名 | Advanced materials
 |
| 出版日期 | 2006-01-19 |
| 卷号 | 18期号:2页码:181-+ |
| ISSN号 | 0935-9648 |
| DOI | 10.1002/adma.200501324 |
| 通讯作者 | Liu, yq(hanbx@iccas.ac.cn) |
| 英文摘要 | Based on a simple low-temperature chemical solution method, multiwalled carbon nanotubes (mwcnts) are coated discontinuously with a alumina gate-dielectric shell (see figure) and application as p-type field-effect transistors is demonstrated. with a coating thickness of 8 nm, the drain current exceeds the gate current by a factor of 10(4)-10(5), confirming the excellent gate insulation provided by the alumina dielectric. |
| WOS关键词 | ATOMIC-LAYER DEPOSITION ; LOGIC GATES ; SINGLE ; OXIDE ; NANOCABLES |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000234993700006 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2378633 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Liu, YQ |
| 作者单位 | 1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100064, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fu, L,Liu, YQ,Liu, ZM,et al. Carbon nanotubes coated with alumina as gate dielectrics of field-effect transistors[J]. Advanced materials,2006,18(2):181-+. |
| APA | Fu, L.,Liu, YQ.,Liu, ZM.,Han, BX.,Cao, LC.,...&Zhu, DB.(2006).Carbon nanotubes coated with alumina as gate dielectrics of field-effect transistors.Advanced materials,18(2),181-+. |
| MLA | Fu, L,et al."Carbon nanotubes coated with alumina as gate dielectrics of field-effect transistors".Advanced materials 18.2(2006):181-+. |
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来源：中国科学院大学
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